Estimating Stresses Generated in Silicon Wafer from Measured Deflection Distribution

• 資料種別: 記事
• タイトル: Estimating Stresses Generated in Silicon Wafer from Measured Deflection Distribution
• 著者・編者: Naoya TOYAMA; Yuelin ZHANG; Satoru YONEYAMA; Satoshi KUWABARA; Hidetomo TAKANO
• 著者標目: Naoya TOYAMA; Yuelin ZHANG; Satoru YONEYAMA; Satoshi KUWABARA; Hidetomo TAKANO
• タイトル（掲載誌）: Advanced experimental mechanics / Editorial board for advanced experimental mechanics [編]
• 巻号年月日等（掲載誌）: 6:2021.8
• 掲載巻: 6
• 掲載ページ: 33-38
• 掲載年月日（W3CDTF）: 2021-08
• ISSN（掲載誌）: 2189-4752
• ISSN-L（掲載誌）: 2189-4752
• 出版事項（掲載誌）: Niigata : The Japanese Society for Experimental Mechanics
• 出版地（国名コード）: JP
• 本文の言語コード: eng
• 件名標目: Deflection; Silicon wafer; Strain; Stress; Least-squares; Differentiation; Optical method
• NDLC: ZM17
• 対象利用者: 一般
• 所蔵機関: 国立国会図書館
• 請求記号: Z63-D560
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館雑誌記事索引; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 031655618; http://id.ndl.go.jp/bib/031655618
• 整理区分コード: 632

• 要約等: <p>This paper proposes a method to estimate stresses that cause the warpage of a silicon wafer from a deflection measurement. The deflection is measured by an optical method, a scan of a laser displacement sensor. A least-squares method with a finite element mesh is used for smoothing and differentiating the measurements. By applying this method, the surface strains of a silicon wafer are obtained as the 2nd derivatives of the deflection. The stresses that cause the warpage are estimated by assuming that the stresses are released and free in the warped wafer. The effectiveness of the method for obtaining surface strain from deflection is demonstrated by applying it to wafer simulation data and measured beam deflection. Results show that the surface strain can be properly obtained from the deflection measurement. Furthermore, the proposed method is applied to stress analysis of actual silicon wafers. This method is expected to be used to control quality of silicon wafers.</p>
• DOI: 10.11395/aem.6.0_33
• オンライン閲覧公開範囲: インターネット公開
• 連携機関・データベース: 科学技術振興機構 : J-STAGE; http://www.jstage.jst.go.jp

• 要約等: <p>This paper proposes a method to estimate stresses that cause the warpage of a silicon wafer from a deflection measurement. The deflection is measured by an optical method, a scan of a laser displacement sensor. A least-squares method with a finite element mesh is used for smoothing and differentiating the measurements. By applying this method, the surface strains of a silicon wafer are obtained as the 2nd derivatives of the deflection. The stresses that cause the warpage are estimated by assuming that the stresses are released and free in the warped wafer. The effectiveness of the method for obtaining surface strain from deflection is demonstrated by applying it to wafer simulation data and measured beam deflection. Results show that the surface strain can be properly obtained from the deflection measurement. Furthermore, the proposed method is applied to stress analysis of actual silicon wafers. This method is expected to be used to control quality of silicon wafers.</p>
• DOI: 10.11395/aem.6.0_33; https://doi.org/10.11395/aem.6.0_33
• 関連情報（URI）: http://id.ndl.go.jp/bib/031655618; https://ndlsearch.ndl.go.jp/books/R000000004-I031655618
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Japan Link Center; https://japanlinkcenter.org/top; 雑誌記事索引データベース; https://ndlsearch.ndl.go.jp; CiNii Articles
• 書誌ID（NDLBibID）: 031655618; http://id.ndl.go.jp/bib/031655618
• NII論文ID: 130008127487