Parameters Needed for Simulations of Electron Transport in Condensed Matter
デジタルデータあり（科学技術振興機構）
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- 資料種別
- 記事
- 著者・編者
- Aleksander Jablonski
- タイトル（掲載誌）
- Journal of surface analysis / 表面分析研究会 編
- 巻号年月日等（掲載誌）
- 31(3):2025.3
- 掲載巻
- 31
- 掲載号
- 3
- 掲載ページ
- 215-223
- 掲載年月日（W3CDTF）
- 2025-03
- ISSN（掲載誌）
- 1341-1756
- ISSN-L（掲載誌）
- 1341-1756
- 出版事項（掲載誌）
- 東京 : 表面分析研究会
- 出版地（国名コード）
- JP
- 本文の言語コード
- eng
- NDLC
- 対象利用者
- 一般
- 所蔵機関
- 国立国会図書館
- 請求記号
- Z15-B66
- 連携機関・データベース
- 国立国会図書館 : 国立国会図書館雑誌記事索引
- 書誌ID（NDLBibID）
- 034060448
- 整理区分コード
- 632
- 要約等
- The Monte Carlo (MC) approach is a universal tool for describing electron transport in condensed matter and for developing descriptive formulas applicable to quantitative applications of XPS and other electron spectroscopies. Any MC simulation strategy requires implementation of samplers that generate certain parameters that are needed for determining an electron trajectory in the surface region of a sample material. Two parameters are of considerable importance in MC strategies: (i) the cross sections for elastic scattering of electrons by atoms in the surface region, and (ii) the inelastic mean free path (IMFP) of electrons in the sample material.
- DOI
- 10.1384/jsa.31.215
- オンライン閲覧公開範囲
- インターネット公開
- 連携機関・データベース
- 科学技術振興機構 : J-STAGE
- 要約等
- The Monte Carlo (MC) approach is a universal tool for describing electron transport in condensed matter and for developing descriptive formulas applicable to quantitative applications of XPS and other electron spectroscopies. Any MC simulation strategy requires implementation of samplers that generate certain parameters that are needed for determining an electron trajectory in the surface region of a sample material. Two parameters are of considerable importance in MC strategies: (i) the cross sections for elastic scattering of electrons by atoms in the surface region, and (ii) the inelastic mean free path (IMFP) of electrons in the sample material.
- DOI
- 10.1384/jsa.31.215
- 関連情報（URI）
- 参照
- Calculations of electron inelastic mean free paths. XII. data for 42 inorganic compounds over the 50 eV to 200 keV rangeExperimental determination of electron inelastic mean free paths in 13 elemental solids in the 50 to 5000eV energy range by elastic-peak electron spectroscopyCalculations of electron inelastic mean free paths. XIII. Data for 14 organic compounds and water over the 50 eV to 200 keV range with the relativistic full Penn algorithm.Calculations of electron inelastic mean free paths. X. Data for 41 elemental solids over the 50 eV to 200 keV range with the relativistic full Penn algorithmHard X-ray Photoelectron Spectroscopy (HAXPES)Hard x-ray photoelectron spectroscopy: a snapshot of the state-of-the-art in 2020Information depth for elastic-peak electron spectroscopyUnveiling the principle descriptor for predicting the electron inelastic mean free path based on a machine learning frameworkCalculations of electron inelastic mean free paths (IMFPs). XIV. Calculated IMFPs for LiF and Si <sub>3</sub> N <sub>4</sub> and development of an improved predictive IMFP formulaelsepa—Dirac partial-wave calculation of elastic scattering of electrons and positrons by atoms, positive ions and molecules (New Version Announcement)Calculation of multiple-scattering angular distributions of electrons and positronsAuger- and X-Ray Photoelectron Spectroscopy in Materials ScienceAngular distribution of elastic electron backscattering from surfaces: determination of the electron inelastic mean free pathErratumSeries representation of differential elastic scattering cross section for electrons: Applications in theoretical models of electron transport in condensed matterMeasurement of the surface excitation probability of medium energy electrons reflected from Si, Ni, Ge and Ag surfacesElectron inelastic mean free path measured by elastic peak electron spectroscopy for 24 solids between 50 and 3400 eVNIST electron elastic-scattering cross-section database :Effective attenuation length dependence on photoelectron kinetic energy for Au from 1 keV to 15 keVSurface excitation probability of medium energy electrons in metals and semiconductorsCalculations of Mott scattering cross sectionAngle-resolved elastic-peak electron spectroscopy: Solid-state effectsElastic electron reflection for determination of the inelastic mean free path of medium energy electrons in 24 elemental solids for energies between 50 and 3400 eVAn accurate and simple universal curve for the energy‐dependent electron inelastic mean free pathSurface effects on angular distributions in X-ray-photoelectron spectroscopySurface excitation parameter for 12 semiconductors and determination of a general predictive formulaelsepa—Dirac partial-wave calculation of elastic scattering of electrons and positrons by atoms, positive ions and moleculesCalculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV rangeCalculations of electorn inelastic mean free paths. II. Data for 27 elements over the 50–2000 eV rangeSolid state effect in simulations of electron elastic backscatteringAnalytical theory of elastic electron backscattering from elements, alloys and compounds: Comparison with experimental dataElastic backscattering of electrons: determination of physical parameters of electron transport processes by elastic peak electron spectroscopyMultiple elastic scattering of electrons in condensed matterIntercomparison of methods for separation of REELS elastic peak intensities for determination of IMFP
- 連携機関・データベース
- 国立情報学研究所 : CiNii Research
- 提供元機関・データベース
- Japan Link Center雑誌記事索引データベースCrossref
- 書誌ID（NDLBibID）
- 034060448