一般注記We demonstrate an AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of -3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, emonstrating that our AlN/AlGaN approach on an AlN substrate is promising for stable high-temperature operation.
一次資料へのリンクURLhttps://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22897&item_no=1&attribute_id=22&file_no=1
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)