Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

• 資料種別: 文書・図像類
• タイトル: Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation
• 著者・編者: MOTOGAITO, A; OHTA, K; HIRAMATSU, K; OHUCHI, Y; TADATOMO, K; HAMAMURA, Y; FUKUI, K
• 著者標目: MOTOGAITO, A; OHTA, K; HIRAMATSU, K; OHUCHI, Y; TADATOMO, K; HAMAMURA, Y; FUKUI, K
• 出版事項: John Wiley & Sons
• 出版年月日等: 2001-08
• 出版年（W3CDTF）: 2001-08
• タイトル（掲載誌）: Physica Status Solidi - A - Applications and Materials Science
• 巻号年月日等（掲載誌）: 188 1
• 掲載巻: 188
• 掲載号: 1
• 掲載ページ: 337-340
• 本文の言語コード: eng
• 件名標目: 72.40.+w; 73.30.+y; 73.50.Pz; 85.60.Gz; S7.14
• 対象利用者: 一般
• 一般注記: 出版タイプ： AO; The characterization of Schottky type ultraviolet (UV) detectors with transparent electrode between vacuum ultraviolet (VUV) and visible light region using synchrotron radiation is described. The responsivity spectrum of the detectors at 0 V bias was obtained in the wide range between 2 eV (563 nm) and 25 eV (50 nm). The photoemission current from Au electrode was able to be canceled by improving the measuring circuit, and thus we succeeded in operating the detectors without any photoemission current from Au and GaN. The responsivity of the detectors is about 0.15 A/W at 3.5 eV. These results show that these Schottky type detectors with the transparent electrode are effective to detect VUV-UV light (50-360 nm, 3.4-25 eV) without any photoemission.
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 福井大学 : 福井大学学術機関リポジトリ