記事
Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance
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Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance
- 資料種別
- 記事
- 著者
- Yoshioka, Hironoriほか
- 出版者
- American Institute of Physics
- 出版年
- 2012-01-01
- 資料形態
- デジタル
- 掲載誌名
- JOURNAL OF APPLIED PHYSICS 111 1
- 掲載ページ
- p.014502-
資料詳細
要約等：
- We propose a method to accurately determine the surface potential (ψS) based on depletion capacitance, and the interface state density (DIT) was evalu...
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デジタル
- 資料種別
- 記事
- 出版年月日等
- 2012-01-01
- 出版年（W3CDTF）
- 2012-01-01
- 寄与者
- 80225078
- タイトル（掲載誌）
- JOURNAL OF APPLIED PHYSICS
- 巻号年月日等（掲載誌）
- 111 1
- 掲載巻
- 111
- 掲載号
- 1
- 掲載ページ
- 014502-
- 掲載年月日（W3CDTF）
- 2012-01-01
- ISSN（掲載誌）
- 00218979
- 出版事項（掲載誌）
- American Institute of Physics
- 本文の言語コード
- en
- 件名標目
- 対象利用者
- 一般
- DOI
- 10.1063/1.3673572
- オンライン閲覧公開範囲
- インターネット公開
- 著作権情報
- Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS 111, 014502 (2012) and may be found at http://link.aip.org/link/?jap/111/014502
- 関連情報（URI）
- 参照
- Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperatureEnergy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage methodPassivation of hole traps in SiO<sub>2</sub>/GaN metal-oxide-semiconductor devices by high-density magnesium dopingUnderstanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ionsImpact of crystal faces of 4H-SiC in SiO<sub>2</sub>/4H-SiC structures on interface trap densities and mobilitiesPassive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O<sub>2</sub>/Ar gas mixture and its impact on SiO<sub>2</sub>/SiC interface qualityMaterial science and device physics in SiC technology for high-voltage power devicesEnergy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interfaceEstimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperaturesImproved Channel Mobility in 4H-SiC MOSFETs by Boron PassivationStudy of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gasImprovement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ AnnealingHigh-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applicationsDefect engineering in SiC technology for high-voltage power devicesCharacterization of traps at nitrided SiO<sub>2</sub>/SiC interfaces near the conduction band edge by using Hall effect measurementsDemonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO<sub>2</sub>/SiC (0$\bar{3}$3$\bar{8}$) interfacesAnalysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopyCharacterization of traps in SiC/SiO<sub>2</sub>interfaces close to the conduction band by deep-level transient spectroscopyUnexpected fixed charge generation by an additional annealing after interface nitridation processes at the SiO <sub>2</sub> /4H-SiC (0001) interfacesDifferent temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETsHall effect mobility in inversion layer of 4H-SiC MOSFETs with a thermally grown gate oxideInfluence of vacuum annealing on interface properties of SiC (0001) MOS structuresEvaluation method of threshold voltage shift of SiC MOSFETs under negative gate bias using n-type SiC MOS capacitorsElectrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO<sub>2</sub>/4H-SiC(0001) andImproved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectricsDegradation of SiO<sub>2</sub>/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen AnnealingTwo-dimensional defect mapping of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>−</mml:mtext><mml:mi>SiC</mml:mi></mml:math> interfaceInsight into the energy level structure and luminescence process of color centers at SiO2/SiC interfacesPrediction of DC-AC Converter Efficiency Degradation due to Device Aging Using a Compact MOSFET-Aging Model
- 連携機関・データベース
- 国立情報学研究所 : CiNii Research
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- NII論文ID
- 120004920355