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CiNii Research
Improved electrical properties of <i>n-n</i> and <i>p-n</i> Si/SiC junctions with thermal annealing treatment
- 資料種別
- 記事
- 著者
- 梁, 剣波ほか
- 出版者
- AIP Publishing
- 出版年
- 2016-07
- 資料形態
- デジタル
- 掲載誌名
- Journal of Applied Physics 120 3
- 掲載ページ
- p.034504-
資料詳細
要約等：
- The effects of annealing process on the electrical properties of n^+-Si/n-SiC and p^+-Si/n-SiC junctions fabricated by using surface-activated bonding...
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書誌情報
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デジタル
- 資料種別
- 記事
- 出版年月日等
- 2016-07
- 出版年（W3CDTF）
- 2016-07
- タイトル（掲載誌）
- Journal of Applied Physics
- 巻号年月日等（掲載誌）
- 120 3
- 掲載巻
- 120
- 掲載号
- 3
- 掲載ページ
- 034504-
- 掲載年月日（W3CDTF）
- 2016-07
- ISSN（掲載誌）
- 1089755000218979
- 出版事項（掲載誌）
- AIP Publishing
- 本文の言語コード
- en
- 件名標目
- 対象利用者
- 一般
- DOI
- 10.1063/1.4959072
- オンライン閲覧公開範囲
- インターネット公開
- 著作権情報
- This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 120, 034504 (2016) and may be found at https://doi.org/10.1063/1.4959072
- 関連情報（URI）
- 参照
- Fabrication of p^+-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical propertiesElectrical properties and energy band alignments of <i>p</i>-Si/<i>n</i>-Ga2O3 and <i>p</i>+-Si/<i>n</i>-Ga2O3 heterostructures fabricated by surface-activated bondingFabrication of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> /Si heterointerface and characterization of interfacial structures for high-power device applicationsElectrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bondingComparison of thermal stabilities of p<sup>+</sup>-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodesElectrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bondingTransport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfacesHeterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process創エネ・省エネデバイスを目指す異種半導体材料の貼りあわせ
- 参照
- Electrical properties of Si/Si interfaces by using surface-activated bondingEffects of interface state charges on the electrical properties of Si/SiC heterojunctionsEffects of thermal annealing process on the electrical properties of p^+-Si/n-SiC heterojunctionsEffects of annealing on electrical properties of Si/Si junctions by surface-activated bondingFast Atom Beam Activated Wafer Bonds between n-Si and n-GaAs with Low ResistanceCharacterization and modeling of n-n Si∕SiC heterojunction diodesAn investigation of 3C-SiC photoconductive power switching devicesThe Development of a Thin‐Film Silicon Carbide Thermistor Array for Determining Temperature Profiles in an Evaporating Liquid FilmField and thermionic-field emission in Schottky barriersReverse Characteristics of a 4H-SiC Schottky Barrier DiodeElectrical properties of a-SiC/c-Si(p) heterojunctionsThermionic field emission at electrodeposited Ni–Si Schottky barriersElectron effective masses in 4H SiCSi Heterojunction Bipolar Transistors with Single‐Crystalline β ‐ SiC Emittersbeta -SiC/Si heterojunction bipolar transistors with high current gainLarge-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesInvestigation of Si/4H-SiC Hetero-Junction Growth and Electrical PropertiesLow temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristicsSurface activated bonding of silicon wafers at room temperatureLeakage current and charge trapping behavior in TiO2∕SiO2 high-κ gate dielectric stack on 4H-SiC substrate4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated BondingElectrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctionsCarrier Generation and Recombination in P-N Junctions and P-N Junction Characteristicsβ-SiC Photodiodes Prepared on Silicon Substrates by Rapid Thermal Chemical Vapor DepositionTunneling Current Due to Thermionic-Field Emission in an Au–InS Schottky-Barrier DiodeTransmission electron microscope observation of Si/Si Interface bonded at room temperature by Ar beam surface activationElectrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding
- 連携機関・データベース
- 国立情報学研究所 : CiNii Research
- 提供元機関・データベース
- 学術機関リポジトリデータベースCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossref