Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

• 資料種別: 記事
• タイトル: Angular dependence of the magnetoresistance effect in a silicon based p–n junction device
• 著者標目: Tao Wang; Mingsu Si; Dezheng Yang; Zhong Shi; Fangcong Wang; Zhaolong Yang; Shiming Zhou; Desheng Xue
• 出版年月日等: 2014
• 出版年（W3CDTF）: 2014
• タイトル（掲載誌）: Nanoscale
• 巻号年月日等（掲載誌）: 6 8
• 掲載巻: 6
• 掲載号: 8
• 掲載ページ: 3978-3983
• 掲載年月日（W3CDTF）: 2014
• ISSN（掲載誌）: 20403364
• 出版事項（掲載誌）: Royal Society of Chemistry (RSC)
• 対象利用者: 一般
• DOI: 10.1039/c3nr04077a
• 作成日（W3CDTF）: 2014-01-08
• 関連情報（URI）: http://pubs.rsc.org/en/content/articlepdf/2014/NR/C3NR04077A
• 参照: Model for large magnetoresistance effect in p–n junctions; https://cir.nii.ac.jp/crid/1360284924860393856; Changing the Voltage of the p-n Junction in a Magnetic Field; https://cir.nii.ac.jp/crid/1390578979237822080; Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field; https://cir.nii.ac.jp/crid/1390582772436603648
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Crossref; https://www.crossref.org

• 要約等: <p>Anisotropic MR effect is seen in a non-magnetic p–n junction due to the space charge region being modulated by an external magnetic field.</p>（提供元:...