記事
On the Core Behavior of Dislocations in the Covalent Semiconductors C, Si and Ge
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On the Core Behavior of Dislocations in the Covalent Semiconductors C, Si and Ge
- 資料種別
- 記事
- 著者
- Kin-ichi Masudaほか
- 出版者
- IOP Publishing
- 出版年
- 1983-08-01
- 資料形態
- デジタル
- 掲載誌名
- Japanese Journal of Applied Physics 22 8R
- 掲載ページ
- p.1240-
資料詳細
要約等：
- <jats:p> We use a tight-binding (TB) type electronic theory to calculate the core structure and core energy of both screw and 60° dislocations in th...
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デジタル
- 資料種別
- 記事
- 出版年月日等
- 1983-08-01
- 出版年（W3CDTF）
- 1983-08-01
- タイトル（掲載誌）
- Japanese Journal of Applied Physics
- 巻号年月日等（掲載誌）
- 22 8R
- 掲載巻
- 22
- 掲載号
- 8R
- 掲載ページ
- 1240-
- 掲載年月日（W3CDTF）
- 1983-08-01
- ISSN（掲載誌）
- 00214922
- 出版事項（掲載誌）
- IOP Publishing
- 対象利用者
- 一般
- DOI
- 10.1143/jjap.22.1240
- 作成日（W3CDTF）
- 2005-11-04
- 著作権情報
- https://iopscience.iop.org/page/copyrighthttps://iopscience.iop.org/info/page/text-and-data-mining
- 関連情報（URI）
- 参照
- Effects of External Shear Stress on the Smallest Double Kink Nucleation Process in Si
- 参照
- Simplified LCAO Method for the Periodic Potential ProblemAnisotropic conductivity of CdS after plastic deformation and conduction along dislocations: II. Measurements on a microscopic scaleElectron states associated with the core region of the 60° dislocation in silicon and germaniumA tight-binding derivation of force constants : Application to covalent systemsMotion of extended dislocations in silicon crystals observed by HVEMÉtude des systèmes covalents parfaits et imparfaits par deux méthodes d'approximationStacking fault energy and ionicity of cubic III–V compoundsElectronic states associated with the 60° edge dislocation in siliconAngular dependence of electron-energy-loss spectroscopy: Application to diamondRealistic Tight-Binding Calculations of Surface States of Si and Ge (111)Electron states associated with partial dislocations in siliconDissociation of near-screw dislocations in germanium and siliconInvestigations of dislocation strain fields using weak beamsSimple Tight-Binding Calculation of the Transverse Effective Charges in III-V, II-VI, and IV-IV Compound SemiconductorsVelocities of Individual Dislocations in GermaniumBond-Orbital Model and the Properties of Tetrahedrally Coordinated SolidsOn the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in SiliconOn the mobility of partial dislocations in siliconElectronic theory for screw dislocation in b.c.c. transition metalsVelocities of Screw and 60°‐Dislocations in Silicon30° Partial Dislocations in Silicon: Absence of Electrically Active States<i>In situ X-ray</i>topographic studies of the generation and the multiplication processes of dislocations in silicon crystals at elevated temperaturesElectronic states associated with the sixty-degree edge dislocation in germaniumScrew-dislocation motion in b.c.c. transition metals model calculation using a tight-binding-type electronic theoryElectronic structure of the unreconstructed 30° partial dislocation in siliconConstrictions in the stacking faults of dislocations in germaniumThe structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motion
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- 国立情報学研究所 : CiNii Research
- 提供元機関・データベース
- CrossrefCiNii ArticlesCrossref
- NII論文ID
- 210000022385