Fabrication of NbTiN Josephson Junctions With Thermally Oxidized Hf Tunnel Barriers

• 資料種別: 記事
• タイトル: Fabrication of NbTiN Josephson Junctions With Thermally Oxidized Hf Tunnel Barriers
• 著者標目: Hiroyuki Akaike; Kentaro Munemoto; Yoshito Sakakibara; Akira Fujimaki
• 出版年月日等: 2019-08
• 出版年（W3CDTF）: 2019-08
• タイトル（掲載誌）: IEEE Transactions on Applied Superconductivity
• 巻号年月日等（掲載誌）: 29 5
• 掲載巻: 29
• 掲載号: 5
• 掲載ページ: 1-5
• 掲載年月日（W3CDTF）: 2019-08
• ISSN（掲載誌）: 10518223
• 出版事項（掲載誌）: Institute of Electrical and Electronics Engineers (IEEE)
• 対象利用者: 一般
• DOI: 10.1109/tasc.2019.2906278; https://doi.org/10.1109/tasc.2019.2906278
• 作成日（W3CDTF）: 2019-03-19
• 著作権情報: https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html; https://doi.org/10.15223/policy-029; https://doi.org/10.15223/policy-037
• 関連情報（URI）: http://xplorestaging.ieee.org/ielx7/77/8626749/08669952.pdf?arnumber=8669952
• 参照: RSFQ logic/memory family: a new Josephson-junction technology for sub-terahertz-clock-frequency digital systems; https://cir.nii.ac.jp/crid/1360011144002306432; High dielectric constant oxides; https://cir.nii.ac.jp/crid/1360011145159578240; Activation energies and diffusion coefficients of oxygen and nitrogen in niobium and tantalum; https://cir.nii.ac.jp/crid/1360011146203139968; The Rate of Reaction of Nitrogen with Hafnium Metal; https://cir.nii.ac.jp/crid/1360016866714093440; Heats of Formation of Hafnium Oxide and Hafnium Nitride; https://cir.nii.ac.jp/crid/1360016868249433728; An adiabatic quantum flux parametron as an ultra-low-power logic device; https://cir.nii.ac.jp/crid/1360283692417467392; Energy-Efficient Single Flux Quantum Technology; https://cir.nii.ac.jp/crid/1360292618670834944; Nb Josephson junction with a Hf/HfN double overlayer; https://cir.nii.ac.jp/crid/1360298340990034432; High-Gap Nb-AlN-NbN SIS Junctions for Frequency Band 790–950 GHz; https://cir.nii.ac.jp/crid/1360298341680258432; Integration of Planarized Internally-Shunted Submicron NbN Junctions; https://cir.nii.ac.jp/crid/1360298344603592576; Characterization of NbN Tunnel Junctions With Radical-Nitrided $\hbox{AlN}_{\rm x}$ Barriers; https://cir.nii.ac.jp/crid/1360565168035255936; Considerations on the selection of artificial tunneling barriers; https://cir.nii.ac.jp/crid/1360579819376885248; NbN/AlN/NbN/TiN Tunnel Junctions on Si (100) Substrate for Superconducting Devices; https://cir.nii.ac.jp/crid/1360846643012083840; Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers; https://cir.nii.ac.jp/crid/1360848658848060032; Fabrication Process and Properties of Fully-Planarized Deep-Submicron Nb/Al– $\hbox{AlO}_{\rm x}\hbox{/Nb} $ Josephson Junctions for VLSI Circuits; https://cir.nii.ac.jp/crid/1360855569494159360; High current density NbN/AlN/NbN tunnel junctions for submillimeter wave SIS mixers; https://cir.nii.ac.jp/crid/1360855570148997376; Experimental investigations and analysis for high-quality Nb/Al-AlO<i>x</i>/ Nb Josephson junctions; https://cir.nii.ac.jp/crid/1360855570243384704; High-quality Nb/HfO<i>x</i>-Hf/Nb Josephson junction; https://cir.nii.ac.jp/crid/1360861293998898432; Development of epitaxial NbN/MgO/NbN–superconductor-insulator-superconductor mixers for operations over the Nb gap frequency; https://cir.nii.ac.jp/crid/1362544420742081024; Zero Static Power Dissipation Biasing of RSFQ Circuits; https://cir.nii.ac.jp/crid/1362825893887678720; Energy-Efficient Superconducting Computing—Power Budgets and Requirements; https://cir.nii.ac.jp/crid/1362825895016605696; Tunneling Between Superconductors; https://cir.nii.ac.jp/crid/1363670319455887616; Tunneling Model of the Superconducting Proximity Effect; https://cir.nii.ac.jp/crid/1363670319540018304; Fabrication of <roman>NbTiN/Al–AlN</roman>_{<italic>X</italic>}/<roman>NbTiN</roman> Josephson Junctions for Superconducting Circuits Operating Around 10 K; https://cir.nii.ac.jp/crid/1363670319824341504; Ultra-low-power superconductor logic; https://cir.nii.ac.jp/crid/1363670321192786432; High critical current density NbN/AlN/NbN tunnel junctions fabricated on ambient temperature MgO substrates; https://cir.nii.ac.jp/crid/1363951793903042048; The preparation process of plasma-nitrided barriers in NbN Josephson junctions for digital applications; https://cir.nii.ac.jp/crid/1363951794925512064; Specific capacitance of Josephson tunnel junctions; https://cir.nii.ac.jp/crid/1363951796200642304; Hafnium-based high-k gate dielectrics; https://cir.nii.ac.jp/crid/1370579811388292481; Fabrication of NbN/Al-AlNx/NbN tunnel junctions on several kinds of substrates; https://cir.nii.ac.jp/crid/1370579811388292487; Nb 9-Layer Fabrication Process for Superconducting Large-Scale SFQ Circuits and Its Process Evaluation; https://cir.nii.ac.jp/crid/1390282679354289280
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Crossref; https://www.crossref.org; 科学研究費助成事業データベース; https://kaken.nii.ac.jp/ja

• 要約等: We fabricated NbTiN Josephson junctions (JJs) with HfO x barriers on thermally oxidized Si substrates. Hf overlayers with different resistivities we...