タイトル（掲載誌）IEEE Transactions on Electron Devices
出版事項（掲載誌）Institute of Electrical and Electronics Engineers (IEEE)
著作権情報https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
https://doi.org/10.15223/policy-029
https://doi.org/10.15223/policy-037
参照Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO<sub>2</sub> interfaces with gate oxides annealed in NO or POCl<sub>3</sub>
Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations
Body doping dependence of field-effect mobility in both n- and p-channel 4H-SiC metal-oxide-semiconductor field-effect transistors with nitrided gate oxides
Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs
Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process
Effect of nitrogen introduced at the SiC/SiO<sub>2</sub> interface and SiC side on the electronic states by first-principles calculation
High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO<sub>2</sub> interfaces annealed in POCl<sub>3</sub>
連携機関・データベース国立情報学研究所 : CiNii Research