Control of relative etch rates of SiO2 and Si in plasma etching
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CiNii Research
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- 資料種別
- 記事
- 出版年月日等
- 1975-12
- 出版年(W3CDTF)
- 1975-12
- タイトル(掲載誌)
- Solid-State Electronics
- 巻号年月日等(掲載誌)
- 18 12
- 掲載巻
- 18
- 掲載号
- 12
- 掲載ページ
- 1146-1147
- 掲載年月日(W3CDTF)
- 1975-12
- ISSN(掲載誌)
- 00381101
- 出版事項(掲載誌)
- Elsevier BV
- 対象利用者
- 一般
- DOI
- 10.1016/0038-1101(75)90184-7
- 作成日(W3CDTF)
- 2002-10-18
- 著作権情報
- https://www.elsevier.com/tdm/userlicense/1.0/
- 関連情報(URI)
- 参照
- Foundations of low-temperature plasma enhanced materials synthesis and etchingReactive Ion Beam Etching of SiO<sub>2</sub> and Poly-Si Employing C<sub>2</sub>F<sub>6</sub>, SiF<sub>4</sub> and BF<sub>3</sub> GasesMeasurements of the CF, CF<sub>2</sub> and CF<sub>3</sub> Radicals in a CHF<sub>3</sub> Electron Cyclotron Resonance PlasmaProgress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formationProposal of quasi thermal equilibrium model for etching phenomenon by gases: Example of the etching of 4H-SiC by H<sub>2</sub>Effect of External Magnetic Field on Compact Inductively-coupled Reactive Ion Etching ReactorElectron Spectroscopy for Chemical Analysis Study on Influence of Polymerization on Anisotropic Etching of Thick Silicon Oxide Using C<sub> 2</sub>F<sub> 6</sub> Based ECR-RIBECF<sub>3</sub>, CF<sub>2</sub>and CF Radical Measurements in RF CHF<sub>3</sub>Etching Plasma Using Infrared Diode Laser Absorption SpectroscopyLifetime Measurements of CF<sub>x</sub> Radicals and H Atoms in Afterglow of CF<sub>4</sub>/H<sub>2</sub> PlasmasEnhancement of Surface Productions of CF<sub>x</sub> Radicals by the Addition of H<sub> 2</sub> into CF<sub> 4</sub> PlasmasThe role of a photoresist film on reverse gas plasma etching of chromium films.In Situ Measurements of Etching Species in SF<sub>6</sub> Microwave Downstream Plasma by Ion Attachment Mass Spectroscopy材料プロセス用フルオロカーボンプラズマに関する基礎研究の進展 3.親ガスおよびラジカルの気相解離過程Etching Characteristics by M=0 Helicon Wave Plasma.Kinetics of CF<sub>X</sub> (x=1 –3) Radicals and Electrons in RF CF<sub>4</sub>-H<sub>2</sub>, CHF<sub>3</sub>-H<sub>2</sub> and CHF<sub>3</sub>-O<sub>2</sub> PlasmasLoss Processes of F Atoms in Low-Pressure, High-Density CF<sub>4</sub> Plasmas with the Admixture of H<sub>2</sub>Contact-Hole Etching with NH<sub>3</sub>-Added C<sub>5</sub>F<sub>8</sub> Pulse-Modulated PlasmaCharacteristics of Fluorocarbon Radicals and CHF<sub>3</sub>Molecule in CHF<sub>3</sub>Electron Cyclotron Resonance Downstream PlasmaドライエッチングDevelopments of plasma etching technology for fabricating semiconductor devicesHighly Selective Si3N4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
- 連携機関・データベース
- 国立情報学研究所 : CiNii Research
- 提供元機関・データベース
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