記事
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
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CiNii Research
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
- 資料種別
- 記事
- 著者
- Heejun Yangほか
- 出版者
- American Association for the Advancement of Science (AAAS)
- 出版年
- 2012-06
- 資料形態
- デジタル
- 掲載誌名
- Science 336 6085
- 掲載ページ
- p.1140-1143
資料詳細
要約等：
- <jats:title>Updating the Triode with Graphene</jats:title> <jats:p> In early electronics, the triode—a vacuum device that combin...
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デジタル
- 資料種別
- 記事
- 著者標目
- 出版年月日等
- 2012-06
- 出版年（W3CDTF）
- 2012-06
- タイトル（掲載誌）
- Science
- 巻号年月日等（掲載誌）
- 336 6085
- 掲載巻
- 336
- 掲載号
- 6085
- 掲載ページ
- 1140-1143
- 掲載年月日（W3CDTF）
- 2012-06
- ISSN（掲載誌）
- 00368075
- 出版事項（掲載誌）
- American Association for the Advancement of Science (AAAS)
- 対象利用者
- 一般
- DOI
- 10.1126/science.1220527
- 作成日（W3CDTF）
- 2012-05-18
- 参照
- Electrical Transport Properties of Gate Tunable Graphene Lateral Tunnel DiodesLarge current modulation in exfoliated-graphene/MoS2/metal vertical heterostructuresEffects of gas adsorption on the stabilities, electronic structures, and scanning tunneling microscopy of graphene monolayers doped with B or NChemically doped graphene based ternary field effect transistorsExperimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene NanoribbonsGrowth of uniform carbon thin film containing nanocrystalline graphene clusters from evaporated palm oil by thermal chemical vapor depositionGraphene for nanoelectronicsHighly Flexible and High‐Performance Complementary Inverters of Large‐Area Transition Metal Dichalcogenide MonolayersEngineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversionUnipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regionsDevelopment of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltageGrowth of single crystalline Si on graphene using RF-MBE: Orientation control with an AlN interface layerVan der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAsGate-Tunable Atomically Thin Lateral MoS<sub>2</sub> Schottky Junction Patterned by Electron BeamRaman spectral mapping of self-aligned carbon nanowallsImpedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensorsBias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS<sub>2</sub> van der Waals HeterojunctionHigh Mobility WS<sub>2</sub> Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible PhotodetectorsDevelopment of Nano-Carbon Biosensors Using Glycan for Host Range Detection of Influenza VirusPiezoelectrically modulated touch pressure sensor using a graphene barristorBias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistorsDetection of cyclotron resonance using photo-induced thermionic emission at graphene/MoS2 van der Waals interfaceSoft Chemical Synthesis of Functionalized SiliceneTunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS<sub>2</sub> Heterostructure DevicesExperimental study on SET/RESET conditions for graphene resistive random access memoryModulation of Schottky barrier height in graphene/MoS<sub>2</sub>/metal vertical heterostructure with large current ON–OFF ratioSelf-Assembly of a Monolayer Graphene Oxide Film Based on Surface Modification of Substrates and its Vapor-Phase ReductionPerformance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide ElectrodeCarbon Nanowall Field Effect Transistors Using a Self-Aligned Growth ProcessSynthesis and modification of two-dimensional crystalline silicon nanosheets
- 連携機関・データベース
- 国立情報学研究所 : CiNii Research
- 提供元機関・データベース
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