Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices

• 資料種別: 記事
• タイトル: Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices
• 著者標目: Hal Edwards; Rudye McGlothlin; Richard San Martin; Elisa U; Michael Gribelyuk; Rachel Mahaffy; C. Ken Shih; R. Scott List; Vladimir A. Ukraintsev
• 出版年月日等: 1998-02-09
• 出版年（W3CDTF）: 1998-02-09
• タイトル（掲載誌）: Applied Physics Letters
• 巻号年月日等（掲載誌）: 72 6
• 掲載巻: 72
• 掲載号: 6
• 掲載ページ: 698-700
• 掲載年月日（W3CDTF）: 1998-02-09
• ISSN（掲載誌）: 00036951
• 出版事項（掲載誌）: AIP Publishing
• 対象利用者: 一般
• DOI: 10.1063/1.120849; https://doi.org/10.1063/1.120849
• 作成日（W3CDTF）: 2002-07-26
• 関連情報（URI）: https://pubs.aip.org/aip/apl/article-pdf/72/6/698/18532185/698_1_online.pdf
• 参照: Nanoscale characterization of unintentional doping of atomically thin layered semiconductors by scanning nonlinear dielectric microscopy; https://cir.nii.ac.jp/crid/1050289309707354624; High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy; https://cir.nii.ac.jp/crid/1360003449891297536; Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy; https://cir.nii.ac.jp/crid/1360285708888686592; Evaluation of the junction interface of the crystalline germanium heterojunction solar cells; https://cir.nii.ac.jp/crid/1360566399842617216; Surface Potential Fluctuations of SiO₂/SiC Interfaces Investigated by Local Capacitance-Voltage Profiling Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy; https://cir.nii.ac.jp/crid/1360580230594811392; Local carrier distribution imaging on few-layer MoS2 exfoliated on SiO2 by scanning nonlinear dielectric microscopy; https://cir.nii.ac.jp/crid/1361412893702431360; Evaluation of Silicide Morphology by Near-Infrared-Laser Optical-Beam-Induced-Current Technique.; https://cir.nii.ac.jp/crid/1390282681228406784; Two-dimensional carrier profiling by kelvin-probe force microscopy; https://cir.nii.ac.jp/crid/1520290882392801792; Electrical Properties of a Silicon Nanocrystal Embedded in a Thin Oxide Layer; https://cir.nii.ac.jp/crid/1520853833589427200
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Crossref; https://www.crossref.org

• 要約等: <jats:p>Scanning capacitance spectroscopy (SCS), a variant of scanning capacitance microscopy (SCM), is presented. By cycling the applied dc bias volt...