High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

• 資料種別: 記事
• タイトル: High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate
• 著者標目: V. Kumar; A. Kuliev; T. Tanaka; Y. Otoki; I. Adesida
• 出版年月日等: 2003-11-27
• 出版年（W3CDTF）: 2003-11-27
• タイトル（掲載誌）: Electronics Letters
• 巻号年月日等（掲載誌）: 39 24
• 掲載巻: 39
• 掲載号: 24
• 掲載ページ: 1758-1760
• 掲載年月日（W3CDTF）: 2003-11-27
• ISSN（掲載誌）: 00135194
• 出版事項（掲載誌）: Institution of Engineering and Technology (IET)
• 対象利用者: 一般
• DOI: 10.1049/el:20031124
• 作成日（W3CDTF）: 2003-11-28
• 関連情報（URI）: https://digital-library.theiet.org/content/journals/10.1049/el_20031124?crawler=true&mimetype=application/pdf
• 参照: Compressively Strained In_xAl_1-xN/Al_0.22Ga_0.78N/GaN (x = 0.245–0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers; https://cir.nii.ac.jp/crid/1360003446855349632; On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors; https://cir.nii.ac.jp/crid/1360566396806117376; Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes; https://cir.nii.ac.jp/crid/1360576118830023936; Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage; https://cir.nii.ac.jp/crid/1360847871782790272; Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation; https://cir.nii.ac.jp/crid/1360847871784782336; DC and Pulse <i>I</i>–<i>V</i> Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate; https://cir.nii.ac.jp/crid/1360861707147505664; Al₂O₃ Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers; https://cir.nii.ac.jp/crid/1390001206263894784; AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications; https://cir.nii.ac.jp/crid/1390012158460736128; Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance; https://cir.nii.ac.jp/crid/1523106605833471488
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Crossref; https://www.crossref.org