記事
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
デジタルデータあり（Crossref）
すぐに読む
CiNii Research
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
- 資料種別
- 記事
- 著者
- K.F. Schuegrafほか
- 出版者
- Institute of Electrical and Electronics Engineers (IEEE)
- 出版年
- 1994-05
- 資料形態
- デジタル
- 掲載誌名
- IEEE Transactions on Electron Devices 41 5
- 掲載ページ
- p.761-767
全国の図書館の所蔵
国立国会図書館以外の全国の図書館の所蔵状況を表示します。
所蔵のある図書館から取寄せることが可能かなど、資料の利用方法は、ご自身が利用されるお近くの図書館へご相談ください
書誌情報
この資料の詳細や典拠（同じ主題の資料を指すキーワード、著者名）等を確認できます。
デジタル
- 資料種別
- 記事
- 出版年月日等
- 1994-05
- 出版年（W3CDTF）
- 1994-05
- タイトル（掲載誌）
- IEEE Transactions on Electron Devices
- 巻号年月日等（掲載誌）
- 41 5
- 掲載巻
- 41
- 掲載号
- 5
- 掲載ページ
- 761-767
- 掲載年月日（W3CDTF）
- 1994-05
- ISSN（掲載誌）
- 00189383
- 出版事項（掲載誌）
- Institute of Electrical and Electronics Engineers (IEEE)
- 対象利用者
- 一般
- DOI
- 10.1109/16.285029
- 作成日（W3CDTF）
- 2002-08-24
- 著作権情報
- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- 参照
- Towards Oxide Electronics: a RoadmapEffects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate StacksAnalysis of Electron Tunneling Components in p<sup>+</sup> Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim RegionRecovery Strategy of Fatigue-Limited Endurance in Si FeFETs With Thin HfZrO₂ FilmsModeling of Time-Dependent Defect Generation during Constant Voltage Stress for Thin Gate Oxides of Submicron Metal–Oxide–Silicon Field-Effect TransistorMechanism of gate dielectric degradation by hydrogen migration from the cathode interfaceRelationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfacesA Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population CodingCapture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors.Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown.Monte Carlo Simulation of Single-Electron Nanocrystal MemoriesReliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime.Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides.Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide Semiconductor Capacitors.Analysis of Local Breakdown Process in Stressed Gate SiO<sub>2</sub> Films by Conductive Atomic Force MicroscopyQuantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling CurrentReconsideration of hydrogen release at ultra thin gate oxide interface
- 連携機関・データベース
- 国立情報学研究所 : CiNii Research
- 提供元機関・データベース
- CrossrefCiNii ArticlesCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossrefCrossref
- NII論文ID
- 30019644114