シリコン基板上窒化物半導体の高品質化に関する研究

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Material Type: 記事
Title: シリコン基板上窒化物半導体の高品質化に関する研究
Author/Editor: 澤木宣彦
岩田博之
川北将吾他
Author Heading: 澤木宣彦
岩田博之
川北将吾
Alternative Title: Growth of high quality 3-nitrides on silicon substance
Periodical title: 愛知工業大学総合技術研究所研究報告 / 研究報告編集委員会編
No. or year of volume/issue: (13) 2011.9
Issue: 13
Pages: 19～22
Publication date of volume/issue (W3CDTF): 2011-09
ISSN (Periodical Title): 1344-9672
ISSN-L (Periodical Title): 1344-9672
Publication (Periodical Title): 豊田 : 愛知工業大学総合技術研究所
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM2
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z74-B826
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 11268952
http://id.ndl.go.jp/bib/11268952
Bibliographic Record Category (NDL): 632