次世代Siデバイス向けPECVD低誘電率層間絶縁膜用プレカーサーの開発

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Material Type: 記事
Title: 次世代Siデバイス向けPECVD低誘電率層間絶縁膜用プレカーサーの開発
Author/Editor: 田島暢夫
神力学
宮澤和浩他
Author Heading: 田島暢夫
神力学
宮澤和浩
Periodical title: 大陽日酸技報
No. or year of volume/issue: (24) 2005
Issue: 24
Pages: 16～21
Publication date of volume/issue (W3CDTF): 2005
ISSN (Periodical Title): 1349-693X
ISSN-L (Periodical Title): 1349-693X
Publication (Periodical Title): 東京 : 大陽日酸技術本部技報編集事務局
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZP8
Target Audience: 一般
Collection (particular): 国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > その他
https://dl.ndl.go.jp/collections/B00035
Access Restrictions: インターネット公開
Availability of remote photoduplication service: 不可
Holding library: 国立国会図書館
Call No.: Z17-1192
Related Material (URI): http://dl.ndl.go.jp/info:ndljp/pid/3512936
Related Material (Persistent ID (NDL)): info:ndljp/pid/3512936
http://dl.ndl.go.jp/info:ndljp/pid/3512936
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 7890047
http://id.ndl.go.jp/bib/7890047
Bibliographic Record Category (NDL): 632