Doping Characteristics of Gas-Source MBE-Grown n-AlxGa<1-x>As (x=0-0.28) Doped Using Disilane

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Material Type: 記事
Title: Doping Characteristics of Gas-Source MBE-Grown n-AlxGa<1-x>As (x=0-0.28) Doped Using Disilane
Author/Editor: SANDHU, ADARSH
Author Heading: SANDHU, ADARSH
Publication Date: 1990
Publication Date (W3CDTF): 1990
Periodical title: Jpn. J. Appl. Phys.
No. or year of volume/issue: 29
Volume: 29
Pages: 2386-2387
ISSN (Periodical Title): ISSN : 0021-4922
Target Audience: 一般
Note (General): 出版タイプ： NA
identifier:oai:t2r2.star.titech.ac.jp:00105154
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 東京科学大学 : 東京科学大学リサーチリポジトリ(T2R2)