MBE法による３C−SｉC／Sｉ基板上への高品質ＩｎＮエピ膜の作製

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Material Type: 文書・図像類
Title: MBE法による３C−SｉC／Sｉ基板上への高品質ＩｎＮエピ膜の作製
Author/Editor: 吉田, 貞史
Author Heading: 吉田, 貞史
Publication, Distribution, etc.: 埼玉大学総合研究機構
Publication Date: 2007
Publication Date (W3CDTF): 2007
Alternative Title: Growth of High-quality InN Films on 3C-SiC/Si Substrates by Molecular Beam Epitaxy
Periodical title: 総合研究機構研究プロジェクト研究成果報告書
No. or year of volume/issue: 第5号(18年度)
Volume: 第5号(18年度)
Pages: 167-168
Text Language Code: jpn
Target Audience: 一般
Note (General): type:text
2 産学官連携研究及び地域連携研究
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 埼玉大学 : 埼玉大学学術情報リポジトリ（SUCRA）