Lattice defects induced by annealing after n-type doping ion-implantation in silicon
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Table of Contents
Contents
Abstract
p1
1 Introduction
p2
2 Antimony implantation
p7
2.1 Experimental procedure
p7
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- Material Type
- 博士論文
- Author/Editor
- 上杉文彦 [著]
- Author Heading
- 上杉, 文彦 ウエスギ, フミヒコ
- Publication, Distribution, etc.
- Publication Date
- [2000]
- Publication Date (W3CDTF)
- 2000
- Extent
- 1冊
- Alternative Title
- n形ドーピングイオン注入後の熱処理によってシリコン中に誘起される格子欠陥 nガタ ドーピング イオン チュウニュウ ゴ ノ ネツ ショリ ニ ヨッテ シリコン チュウ ニ ユウキ サレル コウシ ケッカン
- Degree grantor/type
- 東京理科大学