Hole and Electron Mobility in Semiconductors with Large Numbers of Excess Carriers

• Material Type: 博士論文
• Title: Hole and Electron Mobility in Semiconductors with Large Numbers of Excess Carriers
• Author/Editor: Smythe, Daniel Lafayette, Jr.
• Author Heading: Smythe, Daniel Lafayette, Jr.
• Publication, Distribution, etc.: Cambridge : Massachusetts Institute of Technology
• Publication Date: 1967.
• Extent: 88p.
• Degree grantor/type: Massachusetts Institute of Technology
• Date Granted: 1967.
• Date Granted (W3CDTF): 1967
• Note (Dissertation): 博士論文; Thesis (doctoral) --Massachusetts Institute of Technology, 1967.
• Place of Publication (Country Code): US
• Text Language Code: eng
• Note (Material Type): [microform]
• Note (General): Microfiche.
• Holding library: 国立国会図書館
• Call No.: LS-DI-MIT-67-265
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000003411750; http://id.ndl.go.jp/bib/000003411750
• Bibliographic Record Category (NDL): 216