Electronic States of Si(001) Stepped Surface

• Material Type: 記事
• Title: Electronic States of Si(001) Stepped Surface
• Author/Editor: YAMAGUCHI,Tsuyoshi
• Publication, Distribution, etc.: 日本 : Progress of Theoretical Physics
• Publication Date: 1992-02-25
• Publication Date (W3CDTF): 1992-02-25
• Periodical title: Progress of theoretical physics. Supplement
• No. or year of volume/issue: (106)
• Volume: (106)
• Pages: 281-294
• Text Language Code: ENG
• Note (General): 著者所属: Faculty of Engineering, Shizuoka University
• Persistent ID (NDL): info:ndljp/pid/10883723; https://dl.ndl.go.jp/pid/10883723
• Collection: 障害者向け資料
• Collection (Materials For Handicapped People:1): テキストデータ
• Collection (particular): 国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > 学術機関 > 学協会; https://dl.ndl.go.jp/collections/B00043
• Acquisition Basis: NII-ELS
• Available (W3CDTF): 2017-08-30
• Date Accepted (W3CDTF): 2017-08-22
• Date Captured (W3CDTF): 2017-08-22
• Format (IMT): application/pdf
• Access Restrictions: インターネット公開
• Availability of remote photoduplication service: 不可
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/10399151; https://dl.ndl.go.jp/pid/10399151
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

• Summary, etc.: Electronic states of the unreconstructed S_b, reconstructed S_b, unreconstructed S_a and buckled S_a steps on the Si(001) surface are calculated by th...