Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors withl Sisesquioxane Gate Insulators

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Material Type: 記事
Title: Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors withl Sisesquioxane Gate Insulators
Author Heading: 永瀬隆
小林隆史
内藤裕義
https://ci.nii.ac.jp/author/DA14093917
Publication Date: 2008
Publication Date (W3CDTF): 2008
Periodical title: Japanese Journal of Applied Physics 47
Pages: 3196-3199
Publication date of volume/issue (W3CDTF): 2008
Target Audience: 一般
Data Provider (Database): 国立情報学研究所 : CiNii Research
https://cir.nii.ac.jp/
Original Data Provider (Database): 科学研究費助成事業データベース
https://kaken.nii.ac.jp/ja