Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

• Material Type: 記事
• Title: Angular dependence of the magnetoresistance effect in a silicon based p–n junction device
• Author Heading: Tao Wang; Mingsu Si; Dezheng Yang; Zhong Shi; Fangcong Wang; Zhaolong Yang; Shiming Zhou; Desheng Xue
• Publication Date: 2014
• Publication Date (W3CDTF): 2014
• Periodical title: Nanoscale
• No. or year of volume/issue: 6 8
• Volume: 6
• Issue: 8
• Pages: 3978-3983
• Publication date of volume/issue (W3CDTF): 2014
• ISSN (Periodical Title): 20403364
• Publication (Periodical Title): Royal Society of Chemistry (RSC)
• Target Audience: 一般
• DOI: 10.1039/c3nr04077a; https://doi.org/10.1039/c3nr04077a
• Date Created (W3CDTF): 2014-01-08
• Related Material (URI): http://pubs.rsc.org/en/content/articlepdf/2014/NR/C3NR04077A
• Is Referenced By: Model for large magnetoresistance effect in p–n junctions; https://cir.nii.ac.jp/crid/1360284924860393856; Changing the Voltage of the p-n Junction in a Magnetic Field; https://cir.nii.ac.jp/crid/1390578979237822080; Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field; https://cir.nii.ac.jp/crid/1390582772436603648
• Data Provider (Database): 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• Original Data Provider (Database): Crossref; https://www.crossref.org

• Summary, etc.: <p>Anisotropic MR effect is seen in a non-magnetic p–n junction due to the space charge region being modulated by an external magnetic field.</p>(Prov...