Frequency Stabilization of AlGaAs Semiconductor Laser Based on the ⁸⁵Rb-D₂ Line

• Material Type: 記事
• Title: Frequency Stabilization of AlGaAs Semiconductor Laser Based on the ⁸⁵Rb-D₂ Line
• Author Heading: Hidemi Tsuchida; Motoichi Ohtsu; Toshiharu Tako; Naimu Kuramochi; Nobunori Oura
• Publication Date: 1982-09-01
• Publication Date (W3CDTF): 1982-09-01
• Periodical title: Japanese Journal of Applied Physics
• No. or year of volume/issue: 21 9A
• Volume: 21
• Issue: 9A
• Pages: L561-
• Publication date of volume/issue (W3CDTF): 1982-09-01
• ISSN (Periodical Title): 00214922
• Publication (Periodical Title): IOP Publishing
• Target Audience: 一般
• DOI: 10.1143/jjap.21.l561; https://doi.org/10.1143/jjap.21.l561
• Date Created (W3CDTF): 2005-11-04
• Rights (production): https://iopscience.iop.org/page/copyright; https://iopscience.iop.org/info/page/text-and-data-mining
• Related Material (URI): https://iopscience.iop.org/article/10.1143/JJAP.21.L561; https://iopscience.iop.org/article/10.1143/JJAP.21.L561/pdf
• Is Referenced By: Achievements of the Quantum Noise Limited Frequency Stability in AlGaAs Semiconductor Laser; https://cir.nii.ac.jp/crid/1360003446837999616; High-Resolution Spectroscopy of Rubidium Atoms; https://cir.nii.ac.jp/crid/1360003446841880960; Theoretical Analysis of Rb and Cs D₂ Lines in Saturation Spectroscopy with Optical Pumping; https://cir.nii.ac.jp/crid/1360284921814866688; Theoretical Analysis of Rb and Cs D₂ Lines in Doppler-Free Spectroscopic Techniques with Optical Pumping; https://cir.nii.ac.jp/crid/1360284921814986624; Use of the faraday effect for frequency stabilization and control of a semiconductor laser; https://cir.nii.ac.jp/crid/1360289848624077440; Relation Between Frequency and Intensity Stabilities in AlGaAs Semiconductor Laser; https://cir.nii.ac.jp/crid/1360566396791248640; Frequency Stabilization of AlGaAs Semiconductor Lasers with External Grating Feedback; https://cir.nii.ac.jp/crid/1360566396791392896; Basic Properties, Linewidth Enhancement Factor and Spectral Linewidth of SQW Laser Diodes Emitting in the 780 nm Region; https://cir.nii.ac.jp/crid/1360566396793422464; Estimation of the Ultimate Frequency Stability of Semiconductor Lasers; https://cir.nii.ac.jp/crid/1360847871767959808; High-Speed Frequency Stabilization of AlGaAs Semiconductor Laser; https://cir.nii.ac.jp/crid/1360847871767988224; Limit of the Frequency Stability in AlGaAs Semiconductor Lasers; https://cir.nii.ac.jp/crid/1360847871768013312; Unmodulated-Type Frequency Stabilization of a PbSnTe Diode Laser; https://cir.nii.ac.jp/crid/1360847871768227840; Accurate Wavelength Measurements of the Absorption Lines in H₂O Vapor by a 0.8 µm AlGaAs Laser; https://cir.nii.ac.jp/crid/1360847871768300928; New Method of Frequency Stabilization of Semiconductor Lasers; https://cir.nii.ac.jp/crid/1360847871769692800; Optimization and Characterization of 780 nm AlGaAs Quantum Well DFB Laser Diodes; https://cir.nii.ac.jp/crid/1360847871770545536; Fabrication of 780-nm AlGaAs Tunable Distributed Bragg Reflector Laser Diodes by Using Compositional Disordering of a Quantum Well; https://cir.nii.ac.jp/crid/1360847871770973696; Wavelength stabilization of a semiconductor laser in high‐speed modulation using the Rb‐D₂ absorption line; https://cir.nii.ac.jp/crid/1361134273553936128; Frequency stabilization of a semiconductor laser using the Faraday effect; https://cir.nii.ac.jp/crid/1362541648437684736; Frequency stabilization of a semiconductor laser under modulation; https://cir.nii.ac.jp/crid/1363104598391023104; Frequency Stabilization of a Semiconductor Laser under Direct Frequency Shift Keying Using the Saturated Absorption Signal.; https://cir.nii.ac.jp/crid/1390001206244863744; New Frequency Stabilization Method of a Semiconductor Laser Using the Faraday Effect of the Rb-D₂ Absorption Line; https://cir.nii.ac.jp/crid/1390282681241532800
• References: Measurement of the Radiative Lifetimes of the First Excited States of Na, K, Rb, and Cs by Means of the Phase-Shift Method*; https://cir.nii.ac.jp/crid/1360011144911619584; Frequency Stabilization of AlGaAs Semiconductor Laser to the Absorption Line of Water Vapor; https://cir.nii.ac.jp/crid/1360566396791131520; Transverse-mode stabilized Ga_1−xAlxAs visible diode lasers; https://cir.nii.ac.jp/crid/1360579816188458496; Frequency-controlled cw tunable GaAs laser; https://cir.nii.ac.jp/crid/1360579818715362560; Frequency stabilisation of semiconductor lasers for heterodyne-type optical communication systems; https://cir.nii.ac.jp/crid/1362544420353100416; High frequency stability of laser diode for heterodyne communication systems; https://cir.nii.ac.jp/crid/1363670320229669504; Frequency-Locking of a GaAlAs Laser to a Doppler-Free Spectrum of the Cs–D<SUB>2</SUB> Line; https://cir.nii.ac.jp/crid/1390001206270399232; Frequency Stability Measurement of Feedback Stabilized AlGaAs DH Laser; https://cir.nii.ac.jp/crid/1390001206270774912; Frequency Stabilization of AlGaAs DH Lasers; https://cir.nii.ac.jp/crid/1390282681247155712; Frequency Stabilization of a PbSnTe Laser on a Methane Line in the v₄ Band; https://cir.nii.ac.jp/crid/1390282681247543296
• Data Provider (Database): 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• Original Data Provider (Database): Crossref; https://www.crossref.org; CiNii Articles
• NAID: 110003928846; 210000022228

• Summary, etc.: <jats:p> The frequency of an AlGaAs semiconductor laser was stabilized by using the linear absorption spectrum of the <jats:sup>85</jats:sup>Rb-D<j...