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Characteristics of Schottky diodes at 10.6 μm

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Characteristics of Schottky diodes at 10.6 μm

Material type
記事
Author
N. Inoueほか
Publisher
AIP Publishing
Publication date
1983-02-01
Material Format
Digital
Journal name
Applied Physics Letters 42 3
Publication Page
p.268-269
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Detailed bibliographic record

Summary, etc.：

<jats:p>Antenna-coupled point contact n-Ge/tungsten Schottky diodes have been used to detect CO2 laser radiation, and a very clear antenna pattern is ...

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Material Type
記事
Title
Characteristics of Schottky diodes at 10.6 μm
Author Heading
N. Inoue
K. Harakawa
Y. Yasuoka
Publication Date
1983-02-01
Publication Date (W3CDTF)
1983-02-01
Periodical title
Applied Physics Letters
No. or year of volume/issue
42 3
Volume
42
Issue
3
Pages
268-269