Modelling of Radiation Response of p-Channel SiC MOSFETs

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Material Type: 記事
Title: Modelling of Radiation Response of p-Channel SiC MOSFETs
Author Heading: Kin Kiong Lee
Takeshi Ohshima
Hisayoshi Itoh
Publication Date: 2003-09-15
Publication Date (W3CDTF): 2003-09-15
Periodical title: Materials Science Forum
No. or year of volume/issue: 433-436
Volume: 433-436
Pages: 761-764
Publication date of volume/issue (W3CDTF): 2003-09-15
Publication (Periodical Title): Trans Tech Publications, Ltd.
Target Audience: 一般
DOI: 10.4028/www.scientific.net/msf.433-436.761
https://doi.org/10.4028/www.scientific.net/msf.433-436.761
Data Provider (Database): 国立情報学研究所 : CiNii Research
https://cir.nii.ac.jp/
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