Properties of hetero-structured SiCX films deposited by hot-wire CVD using SiH3CH3 as carbon source

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Properties of hetero-structured SiCX films deposited by hot-wire CVD using SiH3CH3 as carbon source

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Summary, etc.：: Abstract The hetero-structured SiC X films have been deposited by hot-wire CVD using SiH 3 CH 3 as the carbon source gas. Although the carbon so...

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Material Type: 記事
Title: Properties of hetero-structured SiCX films deposited by hot-wire CVD using SiH3CH3 as carbon source
Author Heading: Takashi Itoh
Norimitsu Yoshida
Takahiro Kawasaki
Shuichi Nonomura
Yuta Takai
Publication Date: 2008-01-01
Publication Date (W3CDTF): 2008-01-01
Periodical title: Thin Solid Films
No. or year of volume/issue: 516
Volume: 516
Pages: 641-643
Publication date of volume/issue (W3CDTF): 2008-01-01
ISSN (Periodical Title): 00406090
Publication (Periodical Title): Elsevier BV
Target Audience: 一般
DOI: 10.1016/j.tsf.2007.06.221
Data Provider (Database): 国立情報学研究所 : CiNii Research
https://cir.nii.ac.jp/
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