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STRAINED-LAYER SEMICONDUCTOR DEVICES INCLUDING SUBSURFACEPATTERNED ACTIVE LAYERS (PATENTS-US ; PATENTS-US-A7652737)

STRAINED-LAYER SEMICONDUCTOR DEVICES INCLUDING SUBSURFACEPATTERNED ACTIVE LAYERS (PATENTS-US ; PATENTS-US-A7652737)
Paper図書
DODSON, B.W. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))1991.
Other Libraries in Japan
  • Author HeadingDODSON, B.W.

ROLE OF CHEMICAL INTERACTIONS IN ION-SOLID PROCESSES (SAND ; SAND-90-2440C)

ROLE OF CHEMICAL INTERACTIONS IN ION-SOLID PROCESSES (SAND ; SAND-90-2440C)
Paper図書
DODSON, B.W. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1990.
Other Libraries in Japan
  • Author HeadingDODSON, B.W.

STRESS ACCOMMODATION IN LARGE-MISMATCH SYSTEMS (SAND ; SAND-90-2282C)

STRESS ACCOMMODATION IN LARGE-MISMATCH SYSTEMS (SAND ; SAND-90-2282C)
Paper図書
DODSON, B.W. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1990.
Other Libraries in Japan
  • Author HeadingDODSON, B.W.

Molecular-dynamics simulation of low-energy beam deposition of silicon (SAND ; SAND-87-0358C; CONF-870224-2; DE87006132)

Molecular-dynamics simulation of low-energy beam deposition of silicon (SAND ; SAND-87-0358C; CONF-870224-2; DE87006132)
Paper図書
Dodson, B.W.Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingDodson, B.W.

TECHNIQUES FOR RECOVERY OF SHOCK-LOADED SAMPLES (SAND ; SAND-89-1964C)

TECHNIQUES FOR RECOVERY OF SHOCK-LOADED SAMPLES (SAND ; SAND-89-1964C)
Paper図書
DODSON, B.W.// BOSLOUGH, M.B. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1989.
Other Libraries in Japan
  • Author HeadingDODSON, B.W. BOSLOUGH, M.B.

SHOCK-INDUCED ATOMIC-SCALE STRUCTURE IN METALS (SAND ; SAND-89-0998C)

SHOCK-INDUCED ATOMIC-SCALE STRUCTURE IN METALS (SAND ; SAND-89-0998C)
Paper図書
TAYLOR, P.A.// DODSON, B.W. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1989.
Other Libraries in Japan
  • Author HeadingTAYLOR, P.A. DODSON, B.W.

Atomic-scale modeling of low-energy ion-solid processes (SAND ; SAND-88-3144C; CONF-881155-18; DE89004374)

Atomic-scale modeling of low-energy ion-solid processes (SAND ; SAND-88-3144C; CONF-881155-18; DE89004374)
Paper図書
Dodson, B.W.Sandia National Labs.1988.1.
Other Libraries in Japan
  • Author HeadingDodson, B.W.

SIMULATIONS OF LOW-ENERGY ION BOMBARDMENT AND EPITAXIAL GROWTH (SAND ; SAND-91-1508C)

SIMULATIONS OF LOW-ENERGY ION BOMBARDMENT AND EPITAXIAL GROWTH (SAND ; SAND-91-1508C)
Paper図書
CHASON, E.// BEDROSSIAN, P.// TSAO, J.Y.// DODSON, B.W.// PICRAUX, S.T. (SANDIA NATIONAL LAB., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1991.
Other Libraries in Japan
  • Author HeadingCHASON, E. BEDROSSIAN, P. TSAO, J.Y. DODSON, B.W. PICRAUX, S.T.

Effect of step edge transition rates and anisotropy in simulations of epitaxial growth (SAND ; SAND-90-1239C) (CONF ; CONF-901035-10)

Effect of step edge transition rates and anisotropy in simulations of epitaxial growth (SAND ; SAND-90-1239C) (CONF ; CONF-901035-10)
Paper図書
E. Chason, B.W. Dodson1990
Other Libraries in Japan
  • Author HeadingChason, E. Dodson, B.W.

Nanometer-scale shock-front structure in metals (SAND ; SAND-88-2093C; CONF-881155-20; DE89004039)

Nanometer-scale shock-front structure in metals (SAND ; SAND-88-2093C; CONF-881155-20; DE89004039)
Paper図書
Taylor, P.A., Dodson, B.W.Sandia National Labs.1988.1.
Other Libraries in Japan
  • Author HeadingTaylor, P.A. Dodson, B.W.

Molecular dynamics simulation of beam deposition of low-energy (10-100 eV) Si atoms on the Si(111) surface (Sandia report ; SAND-87-0261C; CONF-870385-5; DE87006131)

Molecular dynamics simulation of beam deposition of low-energy (10-100 eV) Si atoms on the Si(111) surface (Sandia report ; SAND-87-0261C; CONF-870385-5; DE87006131)
Paper図書
Dodson, B.W., Taylor, P.A.Sandia National Labs.1987.03.
Other Libraries in Japan
  • Author HeadingDodson, B.W. Taylor, P.A.

Metastability in SiGe/Si strained-layer structures (SAND ; SAND-88-0033C; CONF-880408-5; DE88007603)

Metastability in SiGe/Si strained-layer structures (SAND ; SAND-88-0033C; CONF-880408-5; DE88007603)
Paper図書
Dodson, B.W.Sandia National Labs.1988.1.
Other Libraries in Japan
  • Author HeadingDodson, B.W.

Atomistic simulation of stability properties and growth of strained layer structures (Sandia report ; SAND-86-2213C; CONF-870385-1; DE87006712)

Atomistic simulation of stability properties and growth of strained layer structures (Sandia report ; SAND-86-2213C; CONF-870385-1; DE87006712)
Paper図書
Taylor, P.A., Dodson, B.W.Sandia National Lab.1987.01.
Other Libraries in Japan
  • Author HeadingTaylor, P.A. Dodson, B.W.

A study of the thermal stability of (In,Ga)As strained quantum well structures as a function of overlayer thickness (SAND ; SAND-88-1391; CONF-8809152-2; DE88017351)

A study of the thermal stability of (In,Ga)As strained quantum well structures as a function of overlayer thickness (SAND ; SAND-88-1391; CONF-8809152-2; DE88017351)
Paper図書
Zipperian, T.E., Jones, E.D., Dodson, B.W. [et al.]Sandia National Labs.1988.1.
Other Libraries in Japan
  • Author HeadingZipperian, T.E. Jones, E.D. Dodson, B.W. Klem, J.F. Plut, T.A.

Structural relaxation in strained-layer heterostructures (SAND ; SAND-87-2328C; CONF-871027-39; DE88002326)

Structural relaxation in strained-layer heterostructures (SAND ; SAND-87-2328C; CONF-871027-39; DE88002326)
Paper図書
Dodson, B.W., Tsao, J.Y.Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingDodson, B.W. Tsao, J.Y.

Relaxation of metastable semiconductor strained-layer structures by plastic flow (SAND ; SAND-87-2695C; CONF-871124-7; DE88002729)

Relaxation of metastable semiconductor strained-layer structures by plastic flow (SAND ; SAND-87-2695C; CONF-871124-7; DE88002729)
Paper図書
Dodson, B.W., Tsao, J.Y.Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingDodson, B.W. Tsao, J.Y.

Atomic-scale simulation of silicon atomic beam deposition (SAND ; SAND-87-1032C; CONF-870438-11; DE87008973)

Atomic-scale simulation of silicon atomic beam deposition (SAND ; SAND-87-1032C; CONF-870438-11; DE87008973)
Paper図書
Dodson, B.W.Sandia National Labs.1987.4.21.
Other Libraries in Japan
  • Author HeadingDodson, B.W.

Atomistic simulation of low-energy beam deposition (SAND ; SAND-87-1486C; CONF-871124-20; DE88004344)

Atomistic simulation of low-energy beam deposition (SAND ; SAND-87-1486C; CONF-871124-20; DE88004344)
Paper図書
Dodson, B.W.Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingDodson, B.W.

Stability diagrams for epitaxial strained layers (SAND ; SAND-87-1504C; CONF-871124-31; DE88003935)

Stability diagrams for epitaxial strained layers (SAND ; SAND-87-1504C; CONF-871124-31; DE88003935)
Paper図書
Tsao, J.Y., Dodson, B.W., Picraux, S.T.Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingTsao, J.Y. Dodson, B.W. Picraux, S.T.

Atomistic calculation of stability and metastability of coherently strained silicon-like structures (Sandia report ; SAND-86-1374C; CONF-861207-75; DE87002049)

Atomistic calculation of stability and metastability of coherently strained silicon-like structures (Sandia report ; SAND-86-1374C; CONF-861207-75; DE87002049)
Paper図書
Dodson, B.W., Taylor, P.A.Sandia National Labs.1986.01.
Other Libraries in Japan
  • Author HeadingDodson, B.W. Taylor, P.A.
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