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Calculation of thin film parameters from spectroscopic ellipsometry data CONF-960457-6 DE96 008635

Calculation of thin film parameters from spectroscopic ellipsometry data CONF-960457-6 DE96 008635
PaperMicroform規格・テクニカルリポート類
Jellison, G. E., Jr1996<LS-DE96/008635>
National Diet LibraryOther Libraries in Japan

Characterization of lithium phosphorous oxynitride thin films CONF-951007-23 DE96 008064

Characterization of lithium phosphorous oxynitride thin films CONF-951007-23 DE96 008064
PaperMicroform規格・テクニカルリポート類
Yu, X, Bates, J. B, Jellison, G. E., Jr1996<LS-DE96/008064>
National Diet LibraryOther Libraries in Japan

SPECTROSCOPIC ELLIPSOMETRY AND INTERFERENCE REFLECTOMETRY MEASUREMENTS OF CVD SILICON GROWN ON OXIDIZED SILICON (CONF ; CONF-9211127-2)

SPECTROSCOPIC ELLIPSOMETRY AND INTERFERENCE REFLECTOMETRY MEASUREMENTS OF CVD SILICON GROWN ON OXIDIZED SILICON (CONF ; CONF-9211127-2)
Paper図書
JELLISON, G.E. JR.// KEEFER, M.// THORNQUIST, L. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1992.
Other Libraries in Japan
  • Author HeadingJELLISON, G.E. JR. KEEFER, M. THORNQUIST, L.

TWO-CHANNEL SPECTROSCOPIC POLARIZATION MODULATION ELLIPSOMETRY (CONF ; CONF-9104187-1)

TWO-CHANNEL SPECTROSCOPIC POLARIZATION MODULATION ELLIPSOMETRY (CONF ; CONF-9104187-1)
Paper図書
JELLISON, G.E. JR. (OAK RIDGE NATIONAL LAB., TN (USA))1991.
Other Libraries in Japan
  • Author HeadingJELLISON, G.E. JR.

ABLATION, SURFACE ACTIVATION, AND ELECTROLESS METALLIZATION OF INSULATING MATERIALS BY PULSED EXCIMER LASER IRRADIATION (CONF ; CONF-9304144-5)

ABLATION, SURFACE ACTIVATION, AND ELECTROLESS METALLIZATION OF INSULATING MATERIALS BY PULSED EXCIMER LASER IRRADIATION (CONF ; CONF-9304144-5)
Paper図書
LOWNDES, D.H.// GODBOLE, M.J.// JELLISON, G.E. JR.// PEDRAZA, A.J. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1993.
Other Libraries in Japan
  • Author HeadingLOWNDES, D.H. GODBOLE, M.J. JELLISON, G.E. JR. PEDRAZA, A.J.

ION CHANNELING AND SPECTROSCOPIC ELLIPSOMETRY EXAMINATIONS OF THINFILM SIO/SUB 2//EPI-SI STRUCTURES (CONF ; CONF-920402-24)

ION CHANNELING AND SPECTROSCOPIC ELLIPSOMETRY EXAMINATIONS OF THINFILM SIO/SUB 2//EPI-SI STRUCTURES (CONF ; CONF-920402-24)
Paper図書
FIORY, A.T.// ROY, P.K.// JELLISON, G.E. JR. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1992.
Other Libraries in Japan
  • Author HeadingFIORY, A.T. ROY, P.K. JELLISON, G.E. JR.

EPITAXIAL ZNS, ZNSE AND ZNS-ZNSE SUPERLATTICES GROWN ON (001)GAAS BY PULSED-LASER ABLATION (CONF ; CONF-921101-37)

EPITAXIAL ZNS, ZNSE AND ZNS-ZNSE SUPERLATTICES GROWN ON (001)GAAS BY PULSED-LASER ABLATION (CONF ; CONF-921101-37)
Paper図書
MCCAMY, J.W.// LOWNDES, D.H.// BUDAI, J.D.// JELLISON, G.E. JR.// HERMAN, I.P.// KIM, S. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1992.
Other Libraries in Japan
  • Author HeadingMCCAMY, J.W. LOWNDES, D.H. BUDAI, J.D. JELLISON, G.E. JR. HERMAN, I.P. KIM, S.

FUNDAMENTAL ASPECTS OF PULSED-LASER IRRADIATION OF SEMICONDUCTORS. (CONF ; CONF-8609127-4)

FUNDAMENTAL ASPECTS OF PULSED-LASER IRRADIATION OF SEMICONDUCTORS. (CONF ; CONF-8609127-4)
Paper図書
JELLISON, G.E. Jr.(et al.)1986.
Other Libraries in Japan
  • Author HeadingJELLISON, G.E. Jr.

NEW SHORTWAVE SOLAR RADIOMETER WITH INFORMATION-BASED SPARSE SAMPLING (CONF ; CONF-9110336-2)

NEW SHORTWAVE SOLAR RADIOMETER WITH INFORMATION-BASED SPARSE SAMPLING (CONF ; CONF-9110336-2)
Paper図書
SIMPSON, M.L.// CARNAL, C.L.// ERICSON, M.N.// FALTER, D.D.// FALTER, K.G.// JELLISON, G.E. JR.// KRYTER, R.C.// MADDOX, S.R.// MUNRO, J.K.// ROCHELLE, J.M. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))1991.
Other Libraries in Japan
  • Author Heading.... FALTER, K.G. JELLISON, G.E. JR. KRYTER, R.C. MADDOX, S.R. MUN...

ANTIREFLECTION COATINGS FOR PLANAR SILICON SOLAR CELLS. (ORNL ; ORNL-TM-9717)

ANTIREFLECTION COATINGS FOR PLANAR SILICON SOLAR CELLS. (ORNL ; ORNL-TM-9717)
Paper図書
JELLISON, G.E. Jr.(et al.)Oak Ridge National Laboratory(Oak Ridge National Laboratory)1985.
Other Libraries in Japan
  • Author HeadingJELLISON, G.E. Jr.

TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF SILICON AND GERMANIUM PULSED EXCIMER LASER IRRADIATION. (CONF ; CONF-851217-22)

TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF SILICON AND GERMANIUM PULSED EXCIMER LASER IRRADIATION. (CONF ; CONF-851217-22)
Paper図書
JELLISON, G.E. Jr.(et al.)1985.
Other Libraries in Japan
  • Author HeadingJELLISON, G.E. Jr.

OPTICAL FUNCTIONS OF SILICON AT ELEVATED TEMPERATURES DETERMINED BY POLARIZATION. (ORNL ; ORNL-TM-9718)

OPTICAL FUNCTIONS OF SILICON AT ELEVATED TEMPERATURES DETERMINED BY POLARIZATION. (ORNL ; ORNL-TM-9718)
Paper図書
JELLISON, G.E. Jr.(et al.)Oak Ridge National Laboratory(Oak Ridge National Laboratory)1985.
Other Libraries in Japan
  • Author HeadingJELLISON, G.E. Jr.

TIME-RESOLVED ELLIPSOMETRY AND REFLECTIVITY MEASUREMENTS OF THE OPTICAL PROPERTIES OF SILICON DURING PULSED. (CONF ; CONF-841157-45)

TIME-RESOLVED ELLIPSOMETRY AND REFLECTIVITY MEASUREMENTS OF THE OPTICAL PROPERTIES OF SILICON DURING PULSED. (CONF ; CONF-841157-45)
Paper図書
JELLISON, G.E.Jr.(et al.)1984.
Other Libraries in Japan

OPTICAL CONSTANTS FOR SILICON AT 300K AND 10K DETERMINED FROM 1.64 TO 4.73 EV BY ELLIPSOMETRY. (ORNL ; ORNL-TM-8002)

OPTICAL CONSTANTS FOR SILICON AT 300K AND 10K DETERMINED FROM 1.64 TO 4.73 EV BY ELLIPSOMETRY. (ORNL ; ORNL-TM-8002)
Paper図書
JELLISON, G.E. Jr.(et al.)Oak Ridge National Laboratory(Oak Ridge National Laboratory)1982.
Other Libraries in Japan
  • Author HeadingJELLISON, G.E. Jr.

OPTICAL-ABSORPTION MEASUREMENTS OF PURE AND HEAVILY DOPED SILICON FROM 1.24 TO 4.63 EV AND THE EFFECT ON SOLAR-CELL PERF (CONF ; CONF-810526-26(DRAFT))

OPTICAL-ABSORPTION MEASUREMENTS OF PURE AND HEAVILY DOPED SILICON FROM 1.24 TO 4.63 EV AND THE EFFECT ON SOLAR-CELL PERF (CONF ; CONF-810526-26(DRAFT))
Paper図書
JELLISON, G.E.JR.
Other Libraries in Japan

DETAILED EXAMINATION OF TIME-RESOLVED PULSED RAMAN TEMPERATURE MEASUREMENTS OF LASER ANNEALED SILICON. (CONF ; CONF-821107-28)

DETAILED EXAMINATION OF TIME-RESOLVED PULSED RAMAN TEMPERATURE MEASUREMENTS OF LASER ANNEALED SILICON. (CONF ; CONF-821107-28)
Paper図書
JELLISON, G.E.JR.
Other Libraries in Japan

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