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HIGH VOLTAGE BIPOLAR-CMOS STRUCTURE USING POROUS SILICON (PATENTS-US ; PATENTS-US-A7520475)

HIGH VOLTAGE BIPOLAR-CMOS STRUCTURE USING POROUS SILICON (PATENTS-US ; PATENTS-US-A7520475)
Paper図書
GUILINGER, T.R.// KELLY, M.J.// TSAO, S.S. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))1990.
Other Libraries in Japan
  • Author HeadingGUILINGER, T.R. KELLY, M.J. TSAO, S.S.

Test structures for total dose testing of SOI (silicon-on-insulator) mosfets (SAND ; SAND-88-1027C; CONF-880492-1; DE88008473)

Test structures for total dose testing of SOI (silicon-on-insulator) mosfets (SAND ; SAND-88-1027C; CONF-880492-1; DE88008473)
Paper図書
Fleetwood, D.M., Tsao, S.S.Sandia National Labs.1988.1.
Other Libraries in Japan
  • Author HeadingFleetwood, D.M. Tsao, S.S.

POROUS SILICON FORMATION AND ETCHING PROCESS FOR USE IN SILICON MICROMACHINING (PATENTS-US ; PATENTS-US-A7478376)

POROUS SILICON FORMATION AND ETCHING PROCESS FOR USE IN SILICON MICROMACHINING (PATENTS-US ; PATENTS-US-A7478376)
Paper図書
GUILINGER, T.R.// KELLY, M.J.// MARTIN, S.B. JR.// STEVENSON, J.O.// TSAO, S.S. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))1990.
Other Libraries in Japan
  • Author HeadingGUILINGER, T.R. KELLY, M.J. MARTIN, S.B. JR. STEVENSON, J.O. TSAO, S.S.

Silicon electrochemistry related to the formation of porous silicon (SAND ; SAND-88-1386C; CONF-881080-1; DE88011201)

Silicon electrochemistry related to the formation of porous silicon (SAND ; SAND-88-1386C; CONF-881080-1; DE88011201)
Paper図書
Kelly, M.J., Guilinger, T.R., Tsao, S.S.Sandia National Labs.1988.1.
Other Libraries in Japan
  • Author HeadingKelly, M.J. Guilinger, T.R. Tsao, S.S.

Evaluation of silicon-on-insulator MOS (metal-oxide-semiconductor) transistor response to 10-keV X-ray and cobalt-60 irradiation (SAND ; SAND-88-0250C; CONF-880730-1; DE88006102)

Evaluation of silicon-on-insulator MOS (metal-oxide-semiconductor) transistor response to 10-keV X-ray and cobalt-60 irradiation (SAND ; SAND-88-0250C; CONF-880730-1; DE88006102)
Paper図書
Fleetwood, D.M., Tsao, S.S., Winokur, P.S.Sandia National Labs.1988.1.
Other Libraries in Japan
  • Author HeadingFleetwood, D.M. Tsao, S.S. Winokur, P.S.

ELECTROCHEMICAL METHOD FOR DEFECT DELINEATION IN SILICONONINSULATOR WAFERS (PATENTS-US ; PATENTS-US-A7506734)

ELECTROCHEMICAL METHOD FOR DEFECT DELINEATION IN SILICONONINSULATOR WAFERS (PATENTS-US ; PATENTS-US-A7506734)
Paper図書
GUILINGER, T.R.// JONES, D.T.H.// KELLY, M.J.// MEDERNACH, J.W.// STEVENSON, J.O.// TSAO, S.S. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))1990.
Other Libraries in Japan
  • Author HeadingGUILINGER, T.R. JONES, D.T.H. KELLY, M.J. MEDERNACH, J.W. STEVENSON, J.O. TSAO, S.S.

Porosity determinations in buried and surface layers of porous silicon (SAND ; SAND-87-1422C; CONF-871124-37; DE88003636)

Porosity determinations in buried and surface layers of porous silicon (SAND ; SAND-87-1422C; CONF-871124-37; DE88003636)
Paper図書
Guilinger, T.R., Kelly, M.J., Tsao, S.S.Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingGuilinger, T.R. Kelly, M.J. Tsao, S.S.

Oxides and oxynitrides of porous silicon (SAND ; SAND-88-1668C; CONF-881155-2; TI89000301)

Oxides and oxynitrides of porous silicon (SAND ; SAND-88-1668C; CONF-881155-2; TI89000301)
Paper図書
Tsao, S.S., Guilinger, T.R., Kelly, M.J. [et al.]Sandia National Labs.1988.1.
Other Libraries in Japan
  • Author HeadingTsao, S.S. Guilinger, T.R. Kelly, M.J. K...

THIN FOIL ELECTROCHEMICAL CELLS (SAND ; SAND-89-1273C)

THIN FOIL ELECTROCHEMICAL CELLS (SAND ; SAND-89-1273C)
Paper図書
KNAPP, J.A.// GUILINGER, T.R.// KELLY, M.J.// DOYLE, B.L.// WALSH, D.// TSAO, S.S.. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1989.
Other Libraries in Japan
  • Author HeadingKNAPP, J.A. GUILINGER, T.R. KELLY, M.J. DOYLE, B.L. WALSH, D. TSAO, S.S..

HIGH VOLTAGE CONSIDERATIONS FOR SILICON-ON-INSULATOR DEVICES USING POROUS SILICON (SAND ; SAND-89-1282C)

HIGH VOLTAGE CONSIDERATIONS FOR SILICON-ON-INSULATOR DEVICES USING POROUS SILICON (SAND ; SAND-89-1282C)
Paper図書
GUILINGER, T.R.// KELLY, M.J.// TSAO, S.S.// CRISTENSEN, T.M.// SCHUBERT, W.K. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1989.
Other Libraries in Japan
  • Author HeadingGUILINGER, T.R. KELLY, M.J. TSAO, S.S. CRISTENSEN, T.M. SCHUBERT, W....

FORMATION OF MULTIPLE LEVELS OF POROUS SILICON FOR BURIED INSULATORS AND CONDUCTORS IN SILICON DEVICE TECHNOLOGIES (PATENTS-US ; PATENTS-US-A7274892)

FORMATION OF MULTIPLE LEVELS OF POROUS SILICON FOR BURIED INSULATORS AND CONDUCTORS IN SILICON DEVICE TECHNOLOGIES (PATENTS-US ; PATENTS-US-A7274892)
Paper図書
BLEWER, R.S.// GUILINGER, T.R.// KELLY, M.J.// TSAO, S.S. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))1988.
Other Libraries in Japan
  • Author HeadingBLEWER, R.S. GUILINGER, T.R. KELLY, M.J. TSAO, S.S.

Voltammetric investigation of porous silicon for integrated circuit applications (SAND ; SAND-87-1110C-FP) (CONF ; CONF-871027-13-FP)

Voltammetric investigation of porous silicon for integrated circuit applications (SAND ; SAND-87-1110C-FP) (CONF ; CONF-871027-13-FP)
Paper図書
Kelly, M.J., Guilinger, T.R., Tsao, S.S.Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingKelly, M.J. Guilinger, T.R. Tsao, S.S.

Buried layer tungsten deposits in porous silicon: Metal penetration depth and film purity determinants (SAND ; SAND-88-0092C; CONF-8711161-1; DE88006104)

Buried layer tungsten deposits in porous silicon: Metal penetration depth and film purity determinants (SAND ; SAND-88-0092C; CONF-8711161-1; DE88006104)
Paper図書
Blewer, R.S., Tsao, S.S., Gutierrez, G.M.Sandia National Labs., New Mexico Univ., Dept. of Electrical Engineering1987.1.
Other Libraries in Japan
  • Author HeadingBlewer, R.S. Tsao, S.S. Gutierrez, G.M.

Radiation-tolerant, sidewall-hardened SOI/MOS transistors (Sandia report ; SAND-87-0220C) (CONF ; CONF-870724-13)

Radiation-tolerant, sidewall-hardened SOI/MOS transistors (Sandia report ; SAND-87-0220C) (CONF ; CONF-870724-13)
Paper図書
Tsao, S.S., Fleetwood, D.M., Weaver, H.T. [et al.]Sandia National Labs., Bell Labs.1987.01.
Other Libraries in Japan
  • Author HeadingTsao, S.S. Fleetwood, D.M. Weaver, H.T. ...

Characterization of buried-nitride silicon for integrated circuit applications (Sandia report ; SAND-86-2593C; CONF-870438-13; DE87008644)

Characterization of buried-nitride silicon for integrated circuit applications (Sandia report ; SAND-86-2593C; CONF-870438-13; DE87008644)
Paper図書
Myers, D.R., Stein, H.J., Tsao, S.S. [et al.]Sandia National Labs., New Mexico Univ., Dept. of Chemical and Nuclear Engineering1987.01.
Other Libraries in Japan
  • Author HeadingMyers, D.R. Stein, H.J. Tsao, S.S. Arnold, G.W. Hughes, R.C. Mil...

LPCVD tungsten deposition on porous silicon for formation of buried conductors (SAND ; SAND-85-2607C; CONF-851217-7; DE86003713)

LPCVD tungsten deposition on porous silicon for formation of buried conductors (SAND ; SAND-85-2607C; CONF-851217-7; DE86003713)
Paper図書
Tsao, S.S., Blewer, R.S.Sandia National Labs.1985.01.
Other Libraries in Japan
  • Author HeadingTsao, S.S. Blewer, R.S.

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