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遷移金属酸窒化物の合成、構造と電子物性

遷移金属酸窒化物の合成、構造と電子物性
デジタル博士論文
石田, 耕大Kyoto University2024-03-25
インターネットで読める全国の図書館
  • 件名Solid state chemistry Mixed anion High pressure Electronic property Single crystal growth

Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method

Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method
デジタル文書・図像類
花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 木下, 恭一, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.13-17
全国の図書館
  • 件名...体 均質性 熱シンク 熱伝播 single crystal growth traveling liquidus zone metho...

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2000): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-Growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2000): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-Growth of homogeneous crystals
デジタル文書・図像類
宇宙開発事業団, National Space Development Agency of Japan宇宙開発事業団2001-12-25宇宙開発事業団技術報告 = NASDA Technical Memorandum
全国の図書館
  • 件名...us zone method single crystal growth convective flow microgravity ...

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