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Scale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates

Scale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates
デジタル文書・図像類
木下, 恭一, 植田, 稔晃, 足立, 聡, 荒井, 康智, 依田, 眞一, Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Yoda, Shinichi宇宙航空研究開発機構2008-02-29宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-07-015E
全国の図書館
  • 件名...onductor laser traveling liquidus zone method scale up improvement convecti...

Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds

Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds
デジタル文書・図像類
宮田, 浩旭, 緒方, 康行, 足立, 聡, 鶴, 哲也, 村松, 祐治, 木下, 恭一, 小田原, 修, 依田, 眞一, Miyata, Hiroaki, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi, Odawara, Osamu, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.13-20
全国の図書館
  • 件名...格子 polycrystal traveling liquidus zone method optical communication photolu...

Numerical study of thermal conduction influence on homogeneity of InGaAs crystals

Numerical study of thermal conduction influence on homogeneity of InGaAs crystals
デジタル文書・図像類
足立, 聡, 緒方, 康行, 吉崎, 泉, 松本, 聡, 越川, 尚清, 高柳, 昌弘, 木下, 恭一, 依田, 眞一, Adachi, Satoshi, Ogata, Yasuyuki, Yoshizaki, Izumi, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Kinoshita, Kyoichi, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.21-32
全国の図書館
  • 件名... boron nitride traveling liquidus zone method

Growth of In(0.1)Ga(0.9)As single crystal plates and fabrication of In(x)Ga(1-x)As/In(0.1)Ga(0.9)As-Starained Quantum Wells (SQW)

Growth of In(0.1)Ga(0.9)As single crystal plates and fabrication of In(x)Ga(1-x)As/In(0.1)Ga(0.9)As-Starained Quantum Wells (SQW)
デジタル文書・図像類
鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 緒方, 康行, 木下, 恭一, 足立, 聡, 依田, 眞一, 荒井, 昌和, 渡辺, 孝夫, 近藤, 康洋, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Arai, Masakazu, Watanabe, Takao, Kondo, Yasuhiro宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.1-6
全国の図書館
  • 件名...single crystal traveling liquidus zone method optical communication photolu...

Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals

Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals
デジタル文書・図像類
宇宙航空研究開発機構, Japan Aerospace Exploration Agency宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special PublicationJAXA-SP-05-036E
全国の図書館
  • 件名... communication traveling liquidus zone method photoluminescence vapor phase...

Scaling up of TLZ-grown platy In(0.3)Ga(0.7)As crystals for semiconductor laser substrates

Scaling up of TLZ-grown platy In(0.3)Ga(0.7)As crystals for semiconductor laser substrates
デジタル文書・図像類
木下, 恭一, 緒方, 康行, 足立, 聡, 鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 依田, 眞一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2006-03-31宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-SP-05-036Ep.7-12
全国の図書館
  • 件名...single crystal traveling liquidus zone method optical communication photolu...

Quantitative modeling of the traveling liquidus-zone method

Quantitative modeling of the traveling liquidus-zone method
デジタル文書・図像類
中村, 裕彦, 花上, 康宏, 木下, 恭一, 依田, 真一, Nakamura, Hirohiko, Hanaue, Yasuhiro, Kinoshita, Kyoichi, Yoda, Shinichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-40
全国の図書館
  • 件名...)Ga(sub 1-x)As traveling liquidus zone method quantitative model analysis c...

Numerical analysis of a cartridge in the traveling liquidus-zone method under various gravity conditions

Numerical analysis of a cartridge in the traveling liquidus-zone method under various gravity conditions
デジタル文書・図像類
足立, 聡, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.65-84
全国の図書館
  • 件名...ational effect traveling liquidus zone method numerical analysis convective...

Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method

Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method
デジタル文書・図像類
花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 木下, 恭一, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.13-17
全国の図書館
  • 件名...crystal growth traveling liquidus zone method temperature gradient In(sub x...

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2000): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-Growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2000): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-Growth of homogeneous crystals
デジタル文書・図像類
宇宙開発事業団, National Space Development Agency of Japan宇宙開発事業団2001-12-25宇宙開発事業団技術報告 = NASDA Technical Memorandum
全国の図書館
  • 件名...b 1 minus x)As traveling liquidus zone method single crystal growth convect...

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