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False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation (Special Issue : Solid State Devices and Materials)

False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation (Special Issue : Solid State Devices and Materials)
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Takuya Sawada, Hidehiro Takata, Koji Nii 他<Z53-A375>Japanese journal of applied physics : JJAP52(4)(2):2013.4p.04CE14-1-5
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High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction (Special Issue : Solid State Devices and Materials (1))

High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction (Special Issue : Solid State Devices and Materials (1))
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Takashi Ohsawa, Fumitaka Iga, Shoji Ikeda 他<Z53-A375>Japanese journal of applied physics : JJAP51(2)(2):2012.2p.02BD01-1-6
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A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal-Oxide-Semiconductor Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))

A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal-Oxide-Semiconductor Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
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Hyoungjun Na, Tetsuo Endoh<Z53-A375>Japanese journal of applied physics : JJAP51(2)(2):2012.2p.02BD03-1-8
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Analytical Modeling of Read Margin Probability Distribution Function of Static Random Access Memory Cells in Presence of Process Variations and Negative Bias Temperature Instability Effect

Analytical Modeling of Read Margin Probability Distribution Function of Static Random Access Memory Cells in Presence of Process Variations and Negative Bias Temperature Instability Effect
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Behrouz Afzal, Ali Afzali-Kusha, Massoud Pedram<Z53-A375>Japanese journal of applied physics : JJAP51(11)(1):2012.11p.114301-1-9
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  • 参照...cation to read static noise margin m...... The Impact of Random Device Variati......uctuation, and Random-Dopant Fluctua......g and Analysis Random-Dopant-Induced Variability in...

A O.5-V six-transistor static random access memory with ferroelectric-gate field effect transistors

A O.5-V six-transistor static random access memory with ferroelectric-gate field effect transistors
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Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima 他<Z53-A375>Japanese journal of applied physics : JJAP49(12) 2010.12p.121501-1～8
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  • 参照Matching properties of MOS transistors Static-noise margin analysis of MOS ...

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories
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Lei Li, Wanting Zhou, Huihua Liu<Z78-A749>Journal of nuclear science and technology / Atomic Energy Society of Japan49(3・4):2012.3・4p.450-456
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Nonvolatile static random access memory using magnetic tunnel junctions with current-induced magnetization switching architecture

Nonvolatile static random access memory using magnetic tunnel junctions with current-induced magnetization switching architecture
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Shuu'ichirou Yamamoto, Satoshi Sugahara<Z53-A375>Japanese journal of applied physics : JJAP48(4) (1) 2009.4p.043001-1～7
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  • 参照...ed nonvolatile static random access memory using a resist......Ms Nonvolatile Static Random Access Memory Using Resistiv......orque magnetic random access memories for l......pe nonvolatile static random access memory with perpendic......nsfer-magnetic random access memory cells and smal......of Nonvolatile Static Random Access Memory Based on Spin-......ng Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Ba...
  • 参照...gnetoresistive random access memory using magnetic......d for magnetic random access memory applications u......gnetoresistive Random Access Memory Application

Evaluation and Control of Break-Even Time of Nonvolatile Static Random Access Memory Based on Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions

Evaluation and Control of Break-Even Time of Nonvolatile Static Random Access Memory Based on Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions
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Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara<Z53-A375>Japanese journal of applied physics : JJAP51(4)(1):2012.4p.040212-1-3
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  • 要約等... a nonvolatile static random access memory (NV-SRAM) cell for power gati...
  • 参照...ng Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Ba...
  • 参照...ms Nonvolatile static random access memory based on spin-......d for magnetic random access memory applications u......ous Common-Row-Access Nonvolatile static random access memory using magnetic tunnel junctio...

High speed six-transistor static random access memory cells using single grain thin film transistors fabricated at low temperature process (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

High speed six-transistor static random access memory cells using single grain thin film transistors fabricated at low temperature process (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
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Negin Golshani, Jaber Derakhshandeh, Ryoichi Ishihara 他<Z53-A375>Japanese journal of applied physics : JJAP49(3) (2) 2010.3p.03CA09-1～6
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Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions (Special Issue : Applied Physics on Materials Research)

Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions (Special Issue : Applied Physics on Materials Research)
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Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara<Z53-A375>Japanese journal of applied physics : JJAP51(11)(2):2012.11p.11PB02-1-5
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  • 要約等...ys nonvolatile static random memory (NV-SRAM) cell......al nonvolatile memory functionality makes it possib...
  • 参照...tured logic-in-memory structure Influence of interf...
  • 参照...ms Nonvolatile static random access memory based on spin-......re Nonvolatile static random access memory using magnetic......of Nonvolatile Static Random Access Memory Based on Spin-Transistor Arch...

Nonvolatile static random access memory using resistive switching devices: variable-transconductance metal-oxide-semiconductor field-effect-transistor approach

Nonvolatile static random access memory using resistive switching devices: variable-transconductance metal-oxide-semiconductor field-effect-transistor approach
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Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara<Z53-A375>Japanese journal of applied physics : JJAP49(4) (1) 2010.4p.040209-1～3
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A Memory-Based Programmable Logic Device Using Look-Up Table Cascade with Synchronous Static Random Access Memories (Special Issue: Solid State Devices & Materials)

A Memory-Based Programmable Logic Device Using Look-Up Table Cascade with Synchronous Static Random Access Memories (Special Issue: Solid State Devices & Materials)
デジタル記事障害者向け資料あり
Kazuyuki Nakamura, Tsutomu Sasao, Munehiro Matsuura 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP45(4B) (通号 631) (Special Issue) 2006.4p.3295～3300
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  • 要約等A large-scale memory-technology-based programmable...
  • 参照... Sequencer and Memory with Middle Grained Programma...

Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates
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Kazuhiko Endo, Shin-ichi O'uchi, Yuki Ishikawa 他<Z78-A526>Applied physics express : APEX2(5) 2009.5p.054502-1～3
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Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure

Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure
デジタル記事障害者向け資料あり
Do-Woo Kim, Myeong-Kook Gong, Jin-Suk Wang<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP45(9A) (通号 639) 2006.9p.6837～6840
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  • 参照...error rates in static RAMs Neutron i......ER analysis of static RAM cells Effect of Cosmic Ra...

A new differential-amplifier-based offset-cancellation sense amplifier for speed-improvement of high-density static random access memories in scaled-down complementary metal-oxide-semiconductor technology (Special issue: Solid state devices and materials)

A new differential-amplifier-based offset-cancellation sense amplifier for speed-improvement of high-density static random access memories in scaled-down complementary metal-oxide-semiconductor technology (Special issue: Solid state devices and materials)
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Hidetoshi Ikeda, Koichi Takeda, Masahiro Nomura 他<Z53-A375>Japanese journal of applied physics : JJAP49(4) (2) 2010.4p.04DE09-1～6
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Feasibility stud of a novel four transistor silicon-on-insulator static random access memory cell utilizing partial trench isolation

Feasibility stud of a novel four transistor silicon-on-insulator static random access memory cell utilizing partial trench isolation
デジタル記事障害者向け資料あり
Mamoru Terauchi<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP46(8A) (通号 657) 2007.8p.5136～5138
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  • 件名static random access memory SRAM cell SOI 0.5V

Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments

Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments
紙デジタル記事
Yutaka Arita, Mikio Takai, Izumi Ogawa 他<Z54-J337>Japanese journal of applied physics. Part 2, Letters & express letters42(7A) (通号 392) 2003.7.1p.L738～740
国立国会図書館全国の図書館
  • 要約等...nductor (CMOS) static random access memory (SRAM) were in......ll charge of a memory cell. A thermal neutron-induc...
  • 参照...ent Upset in a Static Random Access Memory and Simulation......nt Upsets in a Static Random Access Memory

"Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm2 Static Random Access Memory Contact Layer Fabrication (Special Issue: Microprocesses & Nanotechnology)

"Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm2 Static Random Access Memory Contact Layer Fabrication (Special Issue: Microprocesses & Nanotechnology)
紙デジタル記事障害者向け資料あり
Takashi Yuito, Vincent Wiaux, Lieve Van Look 他<Z53-A375>Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP45(6B) (通号 635) (Special Issue) 2006.6p.5396～5403
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  • 件名...y contact hole random layout

Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments

Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments
紙記事
Yutaka Arita, Mikio Takai, Izumi Ogawa 他<Z15-B127>大阪大学極限科学研究センター報告書 = Report Kyokugen / 大阪大学極限科学研究センター 編(8) 2003p.63～65
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Influence of Elastic Scattering on the Neutron-Induced Single-Event Upsets in a Static Random Access Memory

Influence of Elastic Scattering on the Neutron-Induced Single-Event Upsets in a Static Random Access Memory
紙デジタル記事
Yutaka Arita, Mikio Takai, Izumi Ogawa 他<Z54-J337>Japanese journal of applied physics. Part 2, Letters & express letters43(9A/B) (通号 418) 2004.9.15p.L1193～1195
国立国会図書館全国の図書館
  • 参照...Event Upset in Static Random Access Memories. Sing......Event Upset in Static Random Access Memories in At......ent Upset in a Static Random Access Memory and Simulation by Monte Carlo...
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