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- 要約等Czochralski (CZ) growth of single silicon (Si) crystals is invariably......d by transport of impurities such as carbon (C), oxygen (O......d accumulation of C during the melting process, a transient g......nvestigate the melting process. Transport phenomena of C, O and relat......namic behavior of impurities was revealed during the melting process of the Si feedsto......was found that contamination with C is activated once the melting front contacts...... C accumulated during the melting process. For accurate control of C contamination in CZ-Si crystals, the accumulation of C during the melting stage should be taken into ac...
- 件名Computer simulation Impurities Mass transfer Czochralski method
デジタル記事
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- 件名18p-A25-5 Silicon 非晶質・微結晶 シリコン系太陽電池
- 出版者（掲載誌）The Japan Society of Applied Physics
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- 要約等...d accumulation of carbon (C) were inves......al simulations of heat and mass transport during the melting process of Czochralski silicon (CZ-Si) crystal growth. Contact react......n extra origin of C contamination. The contribution of the contact re......back diffusion of C monoxide (CO......le. The effect of the gas-guide ......on between the silicon carbide (SiC) ......t. Application of the SiC coatin......y reduce the C contamination because of its higher the......lative to that of graphite. Gas ......back diffusion of the generated ......rametric study of argon gas flow......back diffusion of CO were both effectively supp...
- 参照...rt and control of carbon in Czochralski silicon crystal growth
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- 要約等Abstract Czochralski (CZ) growth of single silicon (Si) crystals is invariably......d by transport of impurities such as carbon (C), oxygen (O......d accumulation of C during the melting process, a transient g......port phenomena of C, O, and rela......namic behavior of impurities was revealed during the melting process of the Si feedsto......s found that C contamination is activated once the melting front contacts......curate control of C contamination in CZ–Si crystals, the accumulation of C during the melting stage should b......ameter studies of furnace pressu......e accumulation of C during the melting stage. At the gas...
- 参照Relationship between carbon concentration ......etime in CZ-Si crystals Numerical ana......rt and control of carbon in Czochralski silicon crystal growth
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- 要約等<jats:p>Carbon contamination in single crystalline silicon is detrimental...... lifetime, one of the critical p......d accumulation of carbon contamination, transient global modeling of heat and mass ......formed for the melting process of the Czochralski silicon crystal growth. Carbon contamination, caused by the presence of carbon monoxide in argon gas and silicon carbide in the silicon feedstock, was......fied model for silicon carbide genera......action between carbon monoxide and solid silicon was proposed u......for the blocky silicon feedstock. The accumulation of carbon in the melted silicon feedstock during the melting ...
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- 件名14a-D13-4 Czochralski method Impurities Computer si...
- 出版者（掲載誌）The Japan Society of Applied Physics