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- 要約等This paper reports a demonstration of a new sensor device structure designed to increase the current change for detecting power cycle degradation. In a previous study, a low-cost and high-accuracy sensor device was proposed, which can be integrated into power device chip. The sensor device consists of a Schottky barrier MISFET. Power cycling degradation is detected by a decrease in the drain current of the SB-MISFET, as repetitive mechanical stress increases the interface state density of the MIS gate. The sensor devices demonstrated the basic operation of a decrease in drain current due ......repetitive mechanical stress. However, the cha...