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HIGH PERFORMANCE 0.5 UM SILICON N-MOS TECHNOLOGY WITH A THIN NITRIDED OXIDE AS GATE DIELECTRIC. (CEA-CONF ; CEA-CONF-9720)

HIGH PERFORMANCE 0.5 UM SILICON N-MOS TECHNOLOGY WITH A THIN NITRIDED OXIDE AS GATE DIELECTRIC. (CEA-CONF ; CEA-CONF-9720)
Paper図書
CAMARGO DA CODTA, J.// GUEGAN, G.// LERME, M.// AND OTHERSCommissariat à l'énergie atomique et aux énergies alternatives(Commissariat à l'énergie atomique et aux énergies alternatives)1987.
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  • Author HeadingCAMARGO DA CODTA, J. GUEGAN, G. LERME, M. AND OTHE...

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