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Photo-induced space charge effects in semiconductors: electro-optics, photoconductivity, and the photorefractive effect : symposium held April 29-May 1, 1992, San Francisco, California, U.S.A.

Photo-induced space charge effects in semiconductors: electro-optics, photoconductivity, and the photorefractive effect : symposium held April 29-May 1, 1992, San Francisco, California, U.S.A.
Paper図書
editors: D.D. Nolte, N.M. Haegel, K.W. Goossen ; sponsors, National Science Foundation, AT&T Bell Laboratories, Hughes Research LaboratoriesMaterials Research Societyc1992
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  • Author HeadingMaterials Research Society. Spring Meeting Nolte, D. D. Haegel, N. M. Goossen, K. W.

EXTRINSIC GERMANIUM PHOTOCONDUCTOR MATERIAL: CRYSTAL GROWTH AND CHARACTERIZATION. (LBL ; LBL-20515)

EXTRINSIC GERMANIUM PHOTOCONDUCTOR MATERIAL: CRYSTAL GROWTH AND CHARACTERIZATION. (LBL ; LBL-20515)
Paper図書
HAEGEL, N.M.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1986.
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GE:BE FAR INFRARED PHOTOCONDUCTORS. (LBL ; LBL-20238)

GE:BE FAR INFRARED PHOTOCONDUCTORS. (LBL ; LBL-20238)
Paper図書
HAEGEL, N.M.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1985.
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TRANSIENT AND TEMPERATURE-DEPENDENT PHENOMENA IN GE:BE AND GE:ZN FAR INFRARED PHOTOCONDUCTORS. (LBL ; LBL-20627)

TRANSIENT AND TEMPERATURE-DEPENDENT PHENOMENA IN GE:BE AND GE:ZN FAR INFRARED PHOTOCONDUCTORS. (LBL ; LBL-20627)
Paper図書
HAEGEL, N.M.Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1985.
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DEVELOPMENT OF HIGH RESPONSIVITY GE:GA PHOTOCONDUCTORS. (LBL ; LBL-17032)

DEVELOPMENT OF HIGH RESPONSIVITY GE:GA PHOTOCONDUCTORS. (LBL ; LBL-17032)
Paper図書
HAEGEL, N.M.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1984.
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PERFORMANCE AND MATERIALS ASPECTS OF GE:BE PHOTOCONDUCTORS. (LBL ; LBL-15409)

PERFORMANCE AND MATERIALS ASPECTS OF GE:BE PHOTOCONDUCTORS. (LBL ; LBL-15409)
Paper図書
HAEGEL, N.M.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1983.
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STATUS OF NTD GE BOLOMETER MATERIAL AND DEVICES (CONF ; CONF-8508141--2)

STATUS OF NTD GE BOLOMETER MATERIAL AND DEVICES (CONF ; CONF-8508141--2)
Paper図書
1985.
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PERFORMANCE AND MATERIALS ASPECTS OF GE:BE AND GE:GA PHOTOCONDUCTORS FOR FAR-INFRARED DETECTION. (LBL ; LBL-16694)

PERFORMANCE AND MATERIALS ASPECTS OF GE:BE AND GE:GA PHOTOCONDUCTORS FOR FAR-INFRARED DETECTION. (LBL ; LBL-16694)
Paper図書
HAEGEL, N.M.Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1983.
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DEVELOPMENT OF HIGH RESPONSIVITY GE:GA PHOTOCONDUCTORS (CONF ; CONF-840725-7)

DEVELOPMENT OF HIGH RESPONSIVITY GE:GA PHOTOCONDUCTORS (CONF ; CONF-840725-7)
Paper図書
1984.
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