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High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer
Digital文書・図像類
MIYAKE, H, YASUKAWA, H, KIDA, Y, OHTA, K, SHIBATA, Y, MOTOGAITO, A, HIRAMATSU, K, OHUCHI, Y, TADATOMO, K, HAMAMURA, Y, FUKUI, KJohn Wiley & Sons2003Physica Status Solidi - A - Applications and Materials Science200 1p.151-154
Other Libraries in Japan
  • Author Heading..., K SHIBATA, Y MOTOGAITO, A HIRAMATSU, K OHUCHI, Y TADATO...

Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation
Digital文書・図像類
MOTOGAITO, A, OHTA, K, HIRAMATSU, K, OHUCHI, Y, TADATOMO, K, HAMAMURA, Y, FUKUI, KJohn Wiley & Sons2001-08Physica Status Solidi - A - Applications and Materials Science188 1p.337-340
Other Libraries in Japan
  • Author HeadingMOTOGAITO, A OHTA, K HIRAMATSU, K OHUCHI, ...

[FIR center FU] Annual report : April2001-March2002 2001

[FIR center FU] Annual report : April2001-March2002 2001
Paper図書
Research center for develgion Fukui university2002
Other Libraries in Japan

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