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HEATPULSE ANNEALING OF ION-IMPLANTED SILICON: STRUCTURAL CHARACTERIZATION BY TRANSMISSION ELECTRON MICROSCOPY. (LBL ; LBL-17320)

HEATPULSE ANNEALING OF ION-IMPLANTED SILICON: STRUCTURAL CHARACTERIZATION BY TRANSMISSION ELECTRON MICROSCOPY. (LBL ; LBL-17320)
Paper図書
SADANA, D.K.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1983.
Other Libraries in Japan
  • Author HeadingSADANA, D.K.

EFFECT OF RECOILED O ON DAMAGE REGROWTH AND ELECTRICAL PROPERTIES OF THROUGH-OXIDE IMPLANTED SI. (LBL ; LBL-15086)

EFFECT OF RECOILED O ON DAMAGE REGROWTH AND ELECTRICAL PROPERTIES OF THROUGH-OXIDE IMPLANTED SI. (LBL ; LBL-15086)
Paper図書
SADANA, D.K.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1982.
Other Libraries in Japan
  • Author HeadingSADANA, D.K.

DAMAGE AND IN-SITU ANNEALING DURING ION IMPLANTATION. (LBL ; LBL-15489)

DAMAGE AND IN-SITU ANNEALING DURING ION IMPLANTATION. (LBL ; LBL-15489)
Paper図書
SADANA, D.K.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1982.
Other Libraries in Japan
  • Author HeadingSADANA, D.K.

Effects of 450/sup 0/C thermal annealing upon oxygen precipitation in B-doped CZ Si wafers (Sandia report ; SAND-86-0849C; CONF-860895-4; DE87000961)

Effects of 450/sup 0/C thermal annealing upon oxygen precipitation in B-doped CZ Si wafers (Sandia report ; SAND-86-0849C; CONF-860895-4; DE87000961)
Paper図書
Hahn, S., Shatas, S., Stein, H.J. [et al.]Siltec Corp., Nanosil, Sandia National Labs., Signetics Corp., Stanford Univ., Stanford Synchrotron Radiation Lab., Carnegie-Mellon Univ.1986.01.
Other Libraries in Japan
  • Author HeadingHahn, S. Shatas, S. Stein, H.J. Arst, M. Sadana, D.K. Rek, Z.U. Stojanoff, V.

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY OF SEMICANDUCTORS. (LBL ; LBL-15085)

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY OF SEMICANDUCTORS. (LBL ; LBL-15085)
Paper図書
SADANA, D.K.Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1982.
Other Libraries in Japan
  • Author HeadingSADANA, D.K.

DIRECT EVIDENCE OF OR-STRUCTURAL DEFECT-OXYGEN INTERACTION IN ION-IMPLANTED GAAS. (LBL ; LBL-13527)

DIRECT EVIDENCE OF OR-STRUCTURAL DEFECT-OXYGEN INTERACTION IN ION-IMPLANTED GAAS. (LBL ; LBL-13527)
Paper図書
SADANA, D.K.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1981.
Other Libraries in Japan
  • Author HeadingSADANA, D.K.

REGROWTH BEHAVIOR OF THREE DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED SI. (LBL ; LBL-10008)

REGROWTH BEHAVIOR OF THREE DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED SI. (LBL ; LBL-10008)
Paper図書
SADANA, D.K.(et al.)Lawrence Berkeley Laboratory(Lawrence Berkeley Laboratory)1979.
Other Libraries in Japan
  • Author HeadingSADANA, D.K.

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