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Thick (~1 mm) p-type In x Ga 1–x N(x ~ 0.36) grown by MOVPE at a low temperature (~570 8C)

Thick (~1 mm) p-type In x Ga 1–x N(x ~ 0.36) grown by MOVPE at a low temperature (~570 8C)
Digital文書・図像類
Yamamoto, A., Hasan, T. Md., Kodama, K., Shigekawa, N., Kuzuhara, M.WILEY-VCH2015-02-17Physica Status Solidi Bp.1-4
Other Libraries in Japan
  • Author HeadingYamamoto, A. Hasan, T. Md. Kodama, K. Shigekawa, N. Kuzuhara, M.

Growth temperature dependent critical thickness for phase separation in thick (1 um) InxGa1-xN (x=0.2?0.4)

Growth temperature dependent critical thickness for phase separation in thick (1 um) InxGa1-xN (x=0.2?0.4)
Digital文書・図像類
Yamamoto, A., Hasan, Md Tanvir, Kodama, K., Shigekawa, N., Kuzuhara, M.ELSEVIER SCIENCE BV2015-06Journal of Crystal Growth419p.64-68
Other Libraries in Japan
  • Author HeadingYamamoto, A. Hasan, Md Tanvir Kodama, K. Shigekawa, N. Kuzuhara, M.

Thick (~1um) p-type InxGa1?x N (x ~ 0.36) grown by MOVPE at a low temperature (~570C)

Thick (~1um) p-type InxGa1?x N (x ~ 0.36) grown by MOVPE at a low temperature (~570C)
Digital文書・図像類
Yamamoto, A., Hasan, Md. T., Kodama, K., Shigekawa, N., Kuzuhara, M.Wiley-VCH Verlag2015-02Physica Status Solidi (b)2015p.1-4
Other Libraries in Japan
  • Author HeadingYamamoto, A. Hasan, Md. T. Kodama, K. Shigekawa, N. Kuzuhara, M.

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