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Lessons learned from early microelectronics production at Sandia National Laboratories SAND980269 DE98 002893

Lessons learned from early microelectronics production at Sandia National Laboratories SAND980269 DE98 002893
Microform規格・テクニカルリポート類
Weaver, H. T1998<LS-DE98/002893>
National Diet Library

Sandia microelectronics development SAND-97-0174C DE97 002650 CONF-9703292

Sandia microelectronics development SAND-97-0174C DE97 002650 CONF-9703292
Microform規格・テクニカルリポート類
Weaver, H. T1997<LS-DE97/002650>
National Diet Library

HIGH PERFORMANCE STATIC LATCHES WITH COMPLETE SINGLE EVENT UPSET IMMUNITY (PATENTS-US ; PATENTS-US-A7793084)

HIGH PERFORMANCE STATIC LATCHES WITH COMPLETE SINGLE EVENT UPSET IMMUNITY (PATENTS-US ; PATENTS-US-A7793084)
Paper図書
CORBETT, W.T.// WEAVER, H.T. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))1991.
Other Libraries in Japan
  • Author HeadingCORBETT, W.T. WEAVER, H.T.

CHARGE STORAGE IN GAAS NONDISTURB-READ STRUCTURES (SAND ; SAND-91-2284C)

CHARGE STORAGE IN GAAS NONDISTURB-READ STRUCTURES (SAND ; SAND-91-2284C)
Paper図書
HETHERINGTON, D.L.// KLEM, J.F.// WEAVER, H.T. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1991.
Other Libraries in Japan
  • Author HeadingHETHERINGTON, D.L. KLEM, J.F. WEAVER, H.T.

SINGLE EVENT UPSET HARDENING TECHNIQUES (SAND ; SAND-90-1725C)

SINGLE EVENT UPSET HARDENING TECHNIQUES (SAND ; SAND-90-1725C)
Paper図書
WEAVER, H.T.// CORBETT, W.T. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1990.
Other Libraries in Japan
  • Author HeadingWEAVER, H.T. CORBETT, W.T.

MONOLITHICALLY INTEGRATED GAAS THYRISTOR-TRANSISTOR AS A HARDENED OPTICALLY-TRIGGERED SWITCH (SAND ; SAND-90-2371C)

MONOLITHICALLY INTEGRATED GAAS THYRISTOR-TRANSISTOR AS A HARDENED OPTICALLY-TRIGGERED SWITCH (SAND ; SAND-90-2371C)
Paper図書
CARSON, R.F.// HUGHES, R.C.// WEAVER, H.T.// BRENNAN, T.M.// HAMMONS, B.E. (SANDIA NATIONAL LABS., ALBUQUERQUE,NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1990.
Other Libraries in Japan
  • Author HeadingCARSON, R.F. HUGHES, R.C. WEAVER, H.T. BRENNAN, T.M. HAMMONS, B.E.

An SEU tolerant memory cell derived from fundamental studies of SEU mechanisms in SRAM (SAND ; SAND-87-0337C; CONF-870724-4; DE87005858)

An SEU tolerant memory cell derived from fundamental studies of SEU mechanisms in SRAM (SAND ; SAND-87-0337C; CONF-870724-4; DE87005858)
Paper図書
Axness, C.L., McBrayer, J.D., Weaver, H.T. [et al.]Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingAxness, C.L. McBrayer, J.D. Weaver, H.T. Browning, J.S. Fu, J.S. Ochoa...

OPTICALLY-TRIGGERED GAAS THYRISTOR SWITCHES: INTEGRATED STRUCTURES FOR ENVIRONMENTAL HARDENING (SAND ; SAND-90-0736C)

OPTICALLY-TRIGGERED GAAS THYRISTOR SWITCHES: INTEGRATED STRUCTURES FOR ENVIRONMENTAL HARDENING (SAND ; SAND-90-0736C)
Paper図書
CARSON, R.F.// WEAVER, H.T.// HUGHES, R.C.// ZIPPERIAN, T.E.// BRENNAN, T.M.// HAMMONS, B.E. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1990.
Other Libraries in Japan
  • Author HeadingCARSON, R.F. WEAVER, H.T. HUGHES, R.C. ZIPPERIAN, T.E. ...

NONVOLATILE SEMICONDUCTOR MEMORY HAVING THREE DIMENSIONAL CHARGE CONFINEMENT (PATENTS-US ; PATENTS-US-A7469995)

NONVOLATILE SEMICONDUCTOR MEMORY HAVING THREE DIMENSIONAL CHARGE CONFINEMENT (PATENTS-US ; PATENTS-US-A7469995)
Paper図書
DAWSON, L.R.// OSBOURN, G.C.// PEERCY, P.S.// WEAVER, H.T.// ZIPPERIAN, T.E. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))1990.
Other Libraries in Japan
  • Author HeadingDAWSON, L.R. OSBOURN, G.C. PEERCY, P.S. WEAVER, H.T. ZIPPERIAN, T.E.

Radiation hardened, optically-triggered thyristor switches: Preliminary data on three device designs (SAND ; SAND-88-2645; DE89011469)

Radiation hardened, optically-triggered thyristor switches: Preliminary data on three device designs (SAND ; SAND-88-2645; DE89011469)
Paper図書
Hughes, R.C., Zipperian, T.E. Weaver, H.T. [et al.]Sandia National Labs.1989.3.
Other Libraries in Japan
  • Author HeadingHughes, R.C. Zipperian, T.E. Weaver, H.T. Brennen, T.M. Hammons, B.E. C...

Electron storage InAs/AlAsSb metal-insulator-semiconductor quantum well heterostructures (SAND ; SAND-88-2925C; CONF-8809152-5; DE89002021)

Electron storage InAs/AlAsSb metal-insulator-semiconductor quantum well heterostructures (SAND ; SAND-88-2925C; CONF-8809152-5; DE89002021)
Paper図書
Lott, J.A., Dawson, L.R., Weaver, H.T. [et al.]Sandia National Lab.1988.1.
Other Libraries in Japan
  • Author HeadingLott, J.A. Dawson, L.R. Weaver, H.T. Zipperian, T.E.

Radiation-tolerant, sidewall-hardened SOI/MOS transistors (Sandia report ; SAND-87-0220C) (CONF ; CONF-870724-13)

Radiation-tolerant, sidewall-hardened SOI/MOS transistors (Sandia report ; SAND-87-0220C) (CONF ; CONF-870724-13)
Paper図書
Tsao, S.S., Fleetwood, D.M., Weaver, H.T. [et al.]Sandia National Labs., Bell Labs.1987.01.
Other Libraries in Japan
  • Author HeadingTsao, S.S. Fleetwood, D.M. Weaver, H.T. Pfeiffer, L. Celler, G.K.

RADIATION RESPONSE OF OPTICALLY-TRIGGERED GAAS THYRISTORS (SAND ; SAND-89-0249C)

RADIATION RESPONSE OF OPTICALLY-TRIGGERED GAAS THYRISTORS (SAND ; SAND-89-0249C)
Paper図書
CARSON, R.F.// HUGHES, R.C.// ZIPPERIAN, T.E.// WEAVER, H.T.// BRENNAN, T.M.// HAMMONS, B. E.// KLEM, J.F. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1989.
Other Libraries in Japan
  • Author HeadingCARSON, R.F. HUGHES, R.C. ZIPPERIAN, T.E. WEAVER, H.T. BRENNAN, T.M. HAMMONS, B. E. ...

Effects of process and geometry scaling on SEU hardness (Sandia report ; SAND-87-0300C; CONF-870724-3; DE87005845; TRN: 87-023679)

Effects of process and geometry scaling on SEU hardness (Sandia report ; SAND-87-0300C; CONF-870724-3; DE87005845; TRN: 87-023679)
Paper図書
Fu, J.S., Lee, K.H., Weaver, H.T. [et al.]Sandia National Labs., Bell Telephone Labs., Inc.1987.01.
Other Libraries in Japan
  • Author HeadingFu, J.S. Lee, K.H. Weaver, H.T. Browning, J.S.

An SEU (single event upset) tolerant memory cell derived from fundamental studies of SEU mechanisms in SRAM (static random access memories) (SAND ; SAND-87-1778C; CONF-8707112-1; DE88000362)

An SEU (single event upset) tolerant memory cell derived from fundamental studies of SEU mechanisms in SRAM (static random access memories) (SAND ; SAND-87-1778C; CONF-8707112-1; DE88000362)
Paper図書
Weaver, H.T., Axness, C.L., McBrayer, J.D. [et al.]Hughes Research, Aerospace Corp., Sandia National Labs.1987.1.
Other Libraries in Japan
  • Author HeadingWeaver, H.T. Axness, C.L. McBrayer, J.D. B...

TRANSIENT TWO-DIMENSIONAL SIMULATION OF SEU IN A CMOS SRAM CELL (CONF ; CONF-850711--2)

TRANSIENT TWO-DIMENSIONAL SIMULATION OF SEU IN A CMOS SRAM CELL (CONF ; CONF-850711--2)
Paper図書
1985.
Other Libraries in Japan

DESIGN AND PERFORMANCE OF SILICON SOLAR CELLS UNDER CONCENTRATED SUNLIGHT. (SAND ; SAND-79-1165C)

DESIGN AND PERFORMANCE OF SILICON SOLAR CELLS UNDER CONCENTRATED SUNLIGHT. (SAND ; SAND-79-1165C)
Paper図書
WEAVER, H.T.(et al.)Sandia National Laboratories(Sandia National Laboratories)1979.
Other Libraries in Japan
  • Author HeadingWEAVER, H.T.

PRESSURE DEPENDENCE OF THE RARE EARTH KNIGHT SHIFT IN THE SINGLET GROUND STATE SYSTEMS PRP AND TMP. (SAND ; SAND-74-5579)

PRESSURE DEPENDENCE OF THE RARE EARTH KNIGHT SHIFT IN THE SINGLET GROUND STATE SYSTEMS PRP AND TMP. (SAND ; SAND-74-5579)
Paper図書
WEAVER, H.T.(et al.)Sandia National Laboratories(Sandia National Laboratories)1974.
Other Libraries in Japan
  • Author HeadingWEAVER, H.T.

RESPONSE OF GAAS CHARGE STORAGE DEVICES TO TRANSIENT IONIZING RADIATION (SAND ; SAND-93-2311C)

RESPONSE OF GAAS CHARGE STORAGE DEVICES TO TRANSIENT IONIZING RADIATION (SAND ; SAND-93-2311C)
Paper図書
HETHERINGTON, D.L.// KLEM, J.F.// HUGHES, R.C., AND WEAVER, H.T. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1993.
Other Libraries in Japan
  • Author HeadingHETHERINGTON, D.L. KLEM, J.F. HUGHES, R.C., AND WEAVER, H.T.

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