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IN SITU X-RAY SCATTERING STUDY OF INCIPIENT FORMATION OF POROUS SILICON (ANL ; ANL/MSD/CP-86502)

IN SITU X-RAY SCATTERING STUDY OF INCIPIENT FORMATION OF POROUS SILICON (ANL ; ANL/MSD/CP-86502)
Paper図書
YOU, HOYDOO// HUANG, KEGANG// YOO, S.S.// NAGY, Z. (ARGONNE NATIONAL LAB., IL (UNITED STATES). MATERIALS SCIENCE DIV.)Argonne National Laboratory(Argonne National Laboratory)1995.
Other Libraries in Japan
  • Author HeadingYOU, HOYDOO HUANG, KEGANG YOO, S.S. NAGY,...

ELECTROCHEMICAL CELL (PATENTS-US ; PATENTS-US-A7689426)

ELECTROCHEMICAL CELL (PATENTS-US ; PATENTS-US-A7689426)
Paper図書
NAGY, Z.// YONCO, R.M.// YOU, HOYDOO// MELENDRES, C.A. (ARGONNE NATIONAL LAB., IL (UNITED STATES))1991.
Other Libraries in Japan
  • Author HeadingNAGY, Z. YONCO, R.M. YOU, HOYDOO MELENDRES, C.A.

X-Ray Diffraction Study of Heteroepitaxy of MOCVD Grown TiO/sub 2/ and VO/sub 2/ Films on Sapphire Single Crystals (ANL ; ANL/CP-73159) (CONF ; CONF-910406-18)

X-Ray Diffraction Study of Heteroepitaxy of MOCVD Grown TiO/sub 2/ and VO/sub 2/ Films on Sapphire Single Crystals (ANL ; ANL/CP-73159) (CONF ; CONF-910406-18)
Paper図書
Hoydoo You [et al.]1991
Other Libraries in Japan
  • Author HeadingYou, Hoydoo Chang, H.L.M. Chiarello, R.P....

FINITE SIZE EFFECT ON THE METAL-INSULATOR TRANSITION OF MOCVD GROWN VO/SUB 2/ FILMS (ANL ; ANL/CP-73695)

FINITE SIZE EFFECT ON THE METAL-INSULATOR TRANSITION OF MOCVD GROWN VO/SUB 2/ FILMS (ANL ; ANL/CP-73695)
Paper図書
KIM, HYUNG KOOK// CHIARELLO, R.P.// YOU, HOYDOO// CHANG, M.H.L.// ZHANG, T.J.// LAM, D.J. (ARGONNE NATIONAL LAB., IL (UNITED STATES))Argonne National Laboratory(Argonne National Laboratory)1991.
Other Libraries in Japan
  • Author HeadingKIM, HYUNG KOOK CHIARELLO, R.P. YOU, HOYDOO CHANG, M.H.L. ZHANG, T.J. LAM...

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