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Preparation of InGaAs starting materials having the gradient InAs concentration
Preparation of InGaAs starting materials having the gradient InAs concentration
Digital
文書・図像類
龍見, 雅美, 加藤, 浩和, 木下, 恭一, Tatsumi, Masami, Kato, Hirokazu, Kinoshita, Kyoichi
宇宙開発事業団
2000-09-29
NASDA Technical Memorandum
p.55-59
Other Libraries in Japan
Subject Heading
InGaAs 出発材料
方向性固化法
過冷却 核生成 成長界面 蛍光X線法 微視的にスムーズな濃...
Note (General)
InAs濃度勾配のあるInGaAs出発物質を
方向性固化法
で準備した。材料は過冷却をおこすことなく、巨視的微視的になめ...
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