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高濃度ドープSiCショットキー接合における高電界輸送および非合金化オーミック接合の形成

高濃度ドープSiCショットキー接合における高電界輸送および非合金化オーミック接合の形成
Digital博士論文
原, 征大Kyoto University2024-03-25
Available onlineOther Libraries in Japan
  • Subject HeadingSilicon Carbide Schottky Contacts Ohmic Contacts Tunneling Current Ion Implantation Heavy Doping

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Digital文書・図像類
CHIKAOKA, Hironari, TAKAKUWA, Yoichi, SHIOJIMA, Kenji, KUZUHARA, Masaaki社団法人 電子情報通信学会2009-05-01IEICE Transactions on ElectronicsE92-C 5p.691-695
Other Libraries in Japan
  • Subject HeadingGaN HEMT potential barrier contact resistance tunneling current density
  • Note (General)...calculation of tunneling current density across an AlGaN barri...

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