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Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor under microgravity conditions

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平岡, 良章, 池上, 圭介, 前川, 透, 松本, 聡, Hiraoka, Yoshiaki, Ikegami, Keisuke, Maekawa, Toru, Matsumoto, Satoshi宇宙開発事業団2000-09-29NASDA Technical Memorandump.29-41

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Subject Heading...ary fit method moving boundary phase transition problem International Space Station g...
Note (General)... to solve this moving boundary phase transition problem. The calculation method is ap...

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