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無重力環境下における化合物半導体結晶の作製(InGaAsの研究)

無重力環境下における化合物半導体結晶の作製(InGaAsの研究)
Digital文書・図像類
龍見, 雅美, 村井, 重夫, 白川, 二, 荒木, 高志, 藤原, 伸介, Tatsumi, Masami, Murai, Shigeo, Shirakawa, Tsuguru, Araki, Takashi, Fujiwara, Shinsuke宇宙開発事業団1994-10-20宇宙開発事業団技術報告 = NASDA Technical Memorandump.952-978
Other Libraries in Japan
  • Subject Heading...elt convection segregation coefficient homogeneity chemical composit...
  • Note (General)...estigated. The segregation coefficient of Ga in InGaA......as 3.2 and the segregation coefficient of Ga in InGaA...... expected that segregation coefficient would become 1......he equilibrium segregation coefficient of Ga was derived to be 3.1 f...

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