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Gallium nitride junction field effect transistors for high-temperature operation SAND-96-1417C DE96 011825 CONF-96061595

Gallium nitride junction field effect transistors for high-temperature operation SAND-96-1417C DE96 011825 CONF-96061595
Microform規格・テクニカルリポート類
Zolper, J. C, Shul, R. J, Baca, A. G, Hietala, V. M, Pearton, S. J1996<LS-DE96/011825>
National Diet Library

GALLIUM NITRIDE JUNCTION FIELD EFFECT TRANSISTORS FOR HIGH-TEMPERATURE OPERATION (SAND ; SAND-96-1417C)

GALLIUM NITRIDE JUNCTION FIELD EFFECT TRANSISTORS FOR HIGH-TEMPERATURE OPERATION (SAND ; SAND-96-1417C)
Paper図書
ZOLPER, J.C.// SHUL, R.J.// BACA, A.G.// HIETALA, V.M.// PEARTON, S.J.// STALL, R.A.// WILSON, R.G. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1996.
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