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Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN SAND-96-0901C DE96 008879 CONF-9604012

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN SAND-96-0901C DE96 008879 CONF-9604012
Microform規格・テクニカルリポート類
Pearton, S. J, Vartuli, C. B, Lee, J. W, Donovan, S. M, MacKenzie, J. D1996<LS-DE96/008879>
National Diet Library

PLASMA CHEMISTRIES FOR DRY ETCHING GAN, ALN, INGAN AND INALN (SAND ; SAND-96-0901C)

PLASMA CHEMISTRIES FOR DRY ETCHING GAN, ALN, INGAN AND INALN (SAND ; SAND-96-0901C)
Paper図書
PEARTON, S.J.// VARTULI, C.B.// LEE, J.W.// DONOVAN, S.M.// MACKENZIE, J.D.// ABERNATHY, C.R.// SHUL, R.J.// MCLANE, G.F.// REN, F. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1996.
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