パワー半導体デバイスの最新技術動向(特集 最新のパワー半導体技術とその応用--シリコンとワイドバンドギャップ半導体)

• 資料種別: 記事
• タイトル: パワー半導体デバイスの最新技術動向
• 著者・編者: 寺島 知秀; 白石 正樹; 岩室 憲幸
• シリーズタイトル: 特集 最新のパワー半導体技術とその応用--シリコンとワイドバンドギャップ半導体
• 著者標目: 寺島 知秀; 白石 正樹; 岩室 憲幸
• 並列タイトル等: Recent technology trend in power semiconductor devices
• タイトル（掲載誌）: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems
• 巻号年月日等（掲載誌）: 130(6) 2010.6
• 掲載巻: 130
• 掲載号: 6
• 掲載ページ: 912～916
• 掲載年月日（W3CDTF）: 2010-06
• ISSN（掲載誌）: 0385-4221
• ISSN-L（掲載誌）: 0385-4221
• 出版事項（掲載誌）: 東京 : 電気学会
• 出版地（国名コード）: JP
• 本文の言語コード: jpn
• 件名標目: パワーMOSFET; スーパージャンクション; IGBT; ワイドバンドギャップ半導体; SiC; GaN; Power MOSFET; Super Junction; Wide band gap semiconductor
• NDLC: ZN31
• 対象利用者: 一般
• 所蔵機関: 国立国会図書館
• 請求記号: Z16-795
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館雑誌記事索引; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 10693945; http://id.ndl.go.jp/bib/10693945
• 整理区分コード: 632

• 要約等: Global warming is already a problem in the world, highly effective use for energy is important. Power semiconductor devices are key components in saving energy, and improvements of performance are strongly demanded. Nowadays, Power MOSFET and IGBT those are the Si devicec are improved by technological developments such as Super Junction and FS-IGBT, and the performance nears the limit. On the other hand, SiC and GaN those are the wide band gap semiconductor devices have potential that greatly exceed the performance limitation of the Si devices, but have still problems, such as long term reliability and costs. This paper presents recent technology trend in Power devices, and those latest reports.
• DOI: 10.1541/ieejeiss.130.912
• オンライン閲覧公開範囲: インターネット公開
• 連携機関・データベース: 科学技術振興機構 : J-STAGE; http://www.jstage.jst.go.jp

• 要約等: Global warming is already a problem in the world, highly effective use for energy is important. Power semiconductor devices are key components in saving energy, and improvements of performance are strongly demanded. Nowadays, Power MOSFET and IGBT those are the Si devicec are improved by technological developments such as Super Junction and FS-IGBT, and the performance nears the limit. On the other hand, SiC and GaN those are the wide band gap semiconductor devices have potential that greatly exceed the performance limitation of the Si devices, but have still problems, such as long term reliability and costs. This paper presents recent technology trend in Power devices, and those latest reports.
• DOI: 10.1541/ieejeiss.130.912; https://doi.org/10.1541/ieejeiss.130.912
• 関連情報（URI）: http://id.ndl.go.jp/bib/10693945; https://ndlsearch.ndl.go.jp/books/R000000004-I10693945; http://www.jstage.jst.go.jp/article/ieejeiss/130/6/130_6_912/_pdf
• 参照: 600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology; https://cir.nii.ac.jp/crid/1360292620898653184; 20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate; https://cir.nii.ac.jp/crid/1360847871783721472; Power Trench MOSFET Devices on Metal Substrates; https://cir.nii.ac.jp/crid/1360855570072481664; System in Package with Mounted Capacitor for Reduced Parasitic Inductance in Voltage Regulators; https://cir.nii.ac.jp/crid/1360855571331998976; Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation; https://cir.nii.ac.jp/crid/1361418519459358592; A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor; https://cir.nii.ac.jp/crid/1361981469681232512; Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss; https://cir.nii.ac.jp/crid/1362262943746726528; CSTBT (III) as the next generation IGBT; https://cir.nii.ac.jp/crid/1362825893884490496; Industrialisation of Resurf Stepped Oxide Technology for Power Transistors; https://cir.nii.ac.jp/crid/1362825895698375680; Enhancement-mode gan hybrid mos-hemts with r on,sp of 20 mω-cm²; https://cir.nii.ac.jp/crid/1363107369200305536; High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse; https://cir.nii.ac.jp/crid/1363670318250185728; C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE; https://cir.nii.ac.jp/crid/1363670320875432832; Critical IGBT Design Regarding EMI and Switching Losses; https://cir.nii.ac.jp/crid/1363951793167017472
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Japan Link Center; https://japanlinkcenter.org/top; 雑誌記事索引データベース; https://ndlsearch.ndl.go.jp; Crossref; https://www.crossref.org; CiNii Articles
• 書誌ID（NDLBibID）: 10693945; http://id.ndl.go.jp/bib/10693945
• NII論文ID: 10026382564